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SYNTHESIS OF HEXAGONAL BORON NITRIDE FILMS AND TRANSFER METHOD
A method of producing hexagonal boron nitride by chemical vapour deposition on a substrate, the method comprising: (a) a step of heating the substrate at a first temperature for a first time; (b) a step of exposing the substrate to a precursor containing boron and a precursor containing nitrogen at a first partial pressure of the precursor(s) at a second temperature for a second time, wherein either a single precursor is used as the precursor containing boron and as the precursor containing nitrogen or different precursors are used as the precursor containing boron and the precursor containingnitrogen; (c) a step of heating the substrate at a third temperature for a third time without the precursor; and (d) a step of exposing the substrate to the precursors at a fourth temperature at a second partial pressure of the precursor(s) for a fourth time.
一种通过化学气相沉积在基底上生产六方氮化硼的方法，所述方法包括：(a)在第一温度下加热所述基底长达第一时间的步骤；(b)在第二温度下在前体的第一分压下将所述基底暴露到包含硼的前体和包含氮的前体长达第二时间的步骤，其中将单一前体用作包含硼的前体和包含氮的前体或将不同前体用作包含硼的前体和包含氮的前体；(c)在不具有前体的情况下在第三温度下加热所述基底长达第三时间的步骤；和(d)在第四温度下在前体的第二分压下将所述基底暴露到所述前体长达第四时间的步骤。
SYNTHESIS OF HEXAGONAL BORON NITRIDE FILMS AND TRANSFER METHOD
A method of producing hexagonal boron nitride by chemical vapour deposition on a substrate, the method comprising: (a) a step of heating the substrate at a first temperature for a first time; (b) a step of exposing the substrate to a precursor containing boron and a precursor containing nitrogen at a first partial pressure of the precursor(s) at a second temperature for a second time, wherein either a single precursor is used as the precursor containing boron and as the precursor containing nitrogen or different precursors are used as the precursor containing boron and the precursor containingnitrogen; (c) a step of heating the substrate at a third temperature for a third time without the precursor; and (d) a step of exposing the substrate to the precursors at a fourth temperature at a second partial pressure of the precursor(s) for a fourth time.
一种通过化学气相沉积在基底上生产六方氮化硼的方法，所述方法包括：(a)在第一温度下加热所述基底长达第一时间的步骤；(b)在第二温度下在前体的第一分压下将所述基底暴露到包含硼的前体和包含氮的前体长达第二时间的步骤，其中将单一前体用作包含硼的前体和包含氮的前体或将不同前体用作包含硼的前体和包含氮的前体；(c)在不具有前体的情况下在第三温度下加热所述基底长达第三时间的步骤；和(d)在第四温度下在前体的第二分压下将所述基底暴露到所述前体长达第四时间的步骤。
SYNTHESIS OF HEXAGONAL BORON NITRIDE FILMS AND TRANSFER METHOD
六方氮化硼膜的合成和转移方法
WANG RUIZHI (author) / HOFMANN STEPHAN (author)
2021-01-05
Patent
Electronic Resource
Chinese
IPC:
C01B
NON-METALLIC ELEMENTS
,
Nichtmetallische Elemente
/
C04B
Kalk
,
LIME
/
C08K
Verwendung von anorganischen oder nichtmakromolekularen organischen Stoffen als Zusatzstoffe
,
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
SYNTHESIS OF HEXAGONAL BORON NITRIDE FILMS AND TRANSFER METHOD
| European Patent Office | 2021
SYNTHESIS OF HEXAGONAL BORON NITRIDE FILMS AND TRANSFER METHOD
| European Patent Office | 2019