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Hot isostatic pressing preparation method of nickel oxide-based ceramic target material
The invention relates to a hot isostatic pressing preparation method of a nickel oxide-based ceramic target material. The method comprises the following steps: A, performing raw material preparation:preparing mixed powder of nickel oxide powder and doped source powder, the total mass fraction of doped source elements in the mixed powder not being higher than 10%, and the doped source being selected from one or more of Li, Na, Mg, Al, Si, K, Zn, Zr, Mn, Cu, Cr, V, W and Ti, the purity of the nickel oxide powder and the doping source powder being higher than 99.99%, the average particle size being 500 nm-2 microns, and the D50 particle size is 50 nm-800 nm; B, performing spray drying; C, loading the product into a sheath mold; D, performing vacuum degassing; E, performing hot isostatic pressing treatment, specifically, the pressure intensity being 50-200 MPa, the sintering temperature being 500-1200 DEG C, the heat preservation time being 1-5h, and the temperature rising speed being 0.5-3 DEG C/min; F, obtaining a sintered blank; and G, carrying out machining or not carrying out machining according to needs to reach the designed size to obtain a target material finished product.
本发明涉及一种氧化镍基陶瓷靶材材料的热等静压制备方法，包括以下步骤：A原料准备：氧化镍粉体和掺杂源粉体的混合粉体，所述混合粉体中掺杂源元素的总质量分数不高于10％，所述掺杂源选自Li、Na、Mg、Al、Si、K、Zn、Zr、Mn、Cu、Cr、V、W、Ti中的一种或几种；所述氧化镍粉体和掺杂源粉体均为纯度高于99.99％，平均粒径500nm‑2μm，D50粒径在50nm‑800nm；B喷雾干燥；C装入包套模具内；D真空除气；E热等静压处理：压强50‑200MPa，烧结温度500‑1200℃，保温时间1‑5h，升温速度0.5‑3℃/min；F得到烧坯；G根据需要进行或不进行机加工到设计尺寸，得到靶材成品。
Hot isostatic pressing preparation method of nickel oxide-based ceramic target material
The invention relates to a hot isostatic pressing preparation method of a nickel oxide-based ceramic target material. The method comprises the following steps: A, performing raw material preparation:preparing mixed powder of nickel oxide powder and doped source powder, the total mass fraction of doped source elements in the mixed powder not being higher than 10%, and the doped source being selected from one or more of Li, Na, Mg, Al, Si, K, Zn, Zr, Mn, Cu, Cr, V, W and Ti, the purity of the nickel oxide powder and the doping source powder being higher than 99.99%, the average particle size being 500 nm-2 microns, and the D50 particle size is 50 nm-800 nm; B, performing spray drying; C, loading the product into a sheath mold; D, performing vacuum degassing; E, performing hot isostatic pressing treatment, specifically, the pressure intensity being 50-200 MPa, the sintering temperature being 500-1200 DEG C, the heat preservation time being 1-5h, and the temperature rising speed being 0.5-3 DEG C/min; F, obtaining a sintered blank; and G, carrying out machining or not carrying out machining according to needs to reach the designed size to obtain a target material finished product.
本发明涉及一种氧化镍基陶瓷靶材材料的热等静压制备方法，包括以下步骤：A原料准备：氧化镍粉体和掺杂源粉体的混合粉体，所述混合粉体中掺杂源元素的总质量分数不高于10％，所述掺杂源选自Li、Na、Mg、Al、Si、K、Zn、Zr、Mn、Cu、Cr、V、W、Ti中的一种或几种；所述氧化镍粉体和掺杂源粉体均为纯度高于99.99％，平均粒径500nm‑2μm，D50粒径在50nm‑800nm；B喷雾干燥；C装入包套模具内；D真空除气；E热等静压处理：压强50‑200MPa，烧结温度500‑1200℃，保温时间1‑5h，升温速度0.5‑3℃/min；F得到烧坯；G根据需要进行或不进行机加工到设计尺寸，得到靶材成品。
Hot isostatic pressing preparation method of nickel oxide-based ceramic target material
一种氧化镍基陶瓷靶材材料的热等静压制备方法
GAO MING (author) / ZHANG HU (author) / ZHANG HUARUI (author) / YANG BENRUN (author)
2021-03-05
Patent
Electronic Resource
Chinese
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