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Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material
The invention relates to a hot isostatic pressing sintering preparation method of a tungsten oxide-based ceramic target material, wherein the preparation method comprises the following steps: raw material preparation, wherein mixed powder contains high-purity tungsten oxide and doping source powder, a doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is greater than 99.95%, the average particle size is 500 nm-1800 nm, the D50 particle size is 200-750 nm, the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula defined inthe specification; carrying out powder loading and vacuum degassing; carrying out hot isostatic pressing sintering; taking out a sintered blank after heat preservation is finished; and machining or not machining according to needs. The hot isostatic pressing sintering preparation method can be used for preparing the tungsten oxide-based ceramic target material which is good in conductivity, relatively high in purity, fine in grain size and high in density.
本发明涉及一种氧化钨基陶瓷靶材材料的热等静压烧结制备方法，包括以下步骤：原料准备：包含高纯氧化钨和掺杂源粉体的混合粉体，掺杂源选自Ti、Mo、V、Al、Li、Zr中的至少三种，所述混合粉体的纯度大于99.95％，平均粒径500nm‑1800nm，D50粒径在200‑750nm；M1、M2、M3、M4、M5的数量关系符合公式：装粉、真空脱气；热等静压烧结；保温结束取出烧坯；根据需要进行或不进行机加工。该种热等静压烧结制备方法能够制备导电性良好、纯度较高、晶粒尺寸细小、致密度高的氧化钨基陶瓷靶材材料。
Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material
The invention relates to a hot isostatic pressing sintering preparation method of a tungsten oxide-based ceramic target material, wherein the preparation method comprises the following steps: raw material preparation, wherein mixed powder contains high-purity tungsten oxide and doping source powder, a doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is greater than 99.95%, the average particle size is 500 nm-1800 nm, the D50 particle size is 200-750 nm, the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula defined inthe specification; carrying out powder loading and vacuum degassing; carrying out hot isostatic pressing sintering; taking out a sintered blank after heat preservation is finished; and machining or not machining according to needs. The hot isostatic pressing sintering preparation method can be used for preparing the tungsten oxide-based ceramic target material which is good in conductivity, relatively high in purity, fine in grain size and high in density.
本发明涉及一种氧化钨基陶瓷靶材材料的热等静压烧结制备方法，包括以下步骤：原料准备：包含高纯氧化钨和掺杂源粉体的混合粉体，掺杂源选自Ti、Mo、V、Al、Li、Zr中的至少三种，所述混合粉体的纯度大于99.95％，平均粒径500nm‑1800nm，D50粒径在200‑750nm；M1、M2、M3、M4、M5的数量关系符合公式：装粉、真空脱气；热等静压烧结；保温结束取出烧坯；根据需要进行或不进行机加工。该种热等静压烧结制备方法能够制备导电性良好、纯度较高、晶粒尺寸细小、致密度高的氧化钨基陶瓷靶材材料。
Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material
一种氧化钨基陶瓷靶材材料的热等静压烧结制备方法
GAO MING (author) / ZHANG HU (author) / ZHANG HUARUI (author) / YANG BENRUN (author)
2021-03-09
Patent
Electronic Resource
Chinese
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