A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SPUTTERING TARGET AND PRODUCTION METHOD FOR OXIDE SPUTTERING TARGET
Disclosed is an oxide sputtering target comprising an oxide that contains zirconium, silicon, and indium as metal components. The oxide sputtering target is characterized in that variation of densityin a target sputtering surface is 3% or less and variation of density in the thickness direction is 5% or less.
本发明提供一种氧化物溅射靶，其由含有锆、硅及铟作为金属成分的氧化物组成，所述氧化物溅射靶的特征在于，靶溅射面内的密度的偏差为3％以下，厚度方向上的密度的偏差为5％以下。
OXIDE SPUTTERING TARGET AND PRODUCTION METHOD FOR OXIDE SPUTTERING TARGET
Disclosed is an oxide sputtering target comprising an oxide that contains zirconium, silicon, and indium as metal components. The oxide sputtering target is characterized in that variation of densityin a target sputtering surface is 3% or less and variation of density in the thickness direction is 5% or less.
本发明提供一种氧化物溅射靶，其由含有锆、硅及铟作为金属成分的氧化物组成，所述氧化物溅射靶的特征在于，靶溅射面内的密度的偏差为3％以下，厚度方向上的密度的偏差为5％以下。
OXIDE SPUTTERING TARGET AND PRODUCTION METHOD FOR OXIDE SPUTTERING TARGET
氧化物溅射靶及氧化物溅射靶的制造方法
UMEMOTO KEITA (author) / RIKUTA YUYA (author) / SHIRAI TAKANORI (author) / IO KENSUKE (author)
2021-03-26
Patent
Electronic Resource
Chinese
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