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Silicon carbide ceramic connection method and silicon carbide cladding
The invention discloses a silicon carbide ceramic connection method and a silicon carbide cladding, and the silicon carbide ceramic connection method comprises the following steps: S1, taking liquid polycarbosilane as a precursor, and adding a curing agent for curing treatment; S2, enabling the cured polycarbosilane to be subjected to heating pretreatment, and forming precursor powder; S3, mixing the precursor powder and an organic solvent to prepare slurry; S4, smearing the slurry between a SiC cladding tube and an end plug which are matched with each other, and forming a sandwich connection structure; and S5, performing high-temperature curing and cracking treatment on the sandwich connection structure, so that the slurry forms a connection layer which is tightly connected between the SiC cladding tube and the end plug. According to the silicon carbide ceramic connection method, high-strength connection of the SiC cladding and the end plug at a low temperature (less than or equal to 1500 DEG C) and without pressure is realized, filler does not need to be added, the pore defect of a middle connection layer is reduced, and the air tightness of a formed joint is improved; and the connection process is simple and has low requirements on equipment, and the cost is reduced.
本发明公开了一种碳化硅陶瓷连接方法及碳化硅包壳，碳化硅陶瓷连接方法包括以下步骤：S1、以液态的聚碳硅烷作为前驱体，加入固化剂进行固化处理；S2、将固化后的聚碳硅烷进行加热预处理，形成前驱体粉体；S3、将所述前驱体粉体和有机溶剂混合制成浆料；S4、将所述浆料涂抹于相适配的SiC包壳管和端塞之间，形成三明治连接结构；S5、将所述三明治连接结构进行高温固化裂解处理，使所述浆料形成紧密连接在所述SiC包壳管和端塞之间的连接层。本发明的碳化硅陶瓷连接方法，实现SiC包壳与端塞在低温(≤1500℃)、无压下高强连接，无需加入填料，减小中间连接层气孔缺陷，提高形成的接头气密性；连接工艺简单，连接工艺对设备要求低，降低成本。
Silicon carbide ceramic connection method and silicon carbide cladding
The invention discloses a silicon carbide ceramic connection method and a silicon carbide cladding, and the silicon carbide ceramic connection method comprises the following steps: S1, taking liquid polycarbosilane as a precursor, and adding a curing agent for curing treatment; S2, enabling the cured polycarbosilane to be subjected to heating pretreatment, and forming precursor powder; S3, mixing the precursor powder and an organic solvent to prepare slurry; S4, smearing the slurry between a SiC cladding tube and an end plug which are matched with each other, and forming a sandwich connection structure; and S5, performing high-temperature curing and cracking treatment on the sandwich connection structure, so that the slurry forms a connection layer which is tightly connected between the SiC cladding tube and the end plug. According to the silicon carbide ceramic connection method, high-strength connection of the SiC cladding and the end plug at a low temperature (less than or equal to 1500 DEG C) and without pressure is realized, filler does not need to be added, the pore defect of a middle connection layer is reduced, and the air tightness of a formed joint is improved; and the connection process is simple and has low requirements on equipment, and the cost is reduced.
本发明公开了一种碳化硅陶瓷连接方法及碳化硅包壳，碳化硅陶瓷连接方法包括以下步骤：S1、以液态的聚碳硅烷作为前驱体，加入固化剂进行固化处理；S2、将固化后的聚碳硅烷进行加热预处理，形成前驱体粉体；S3、将所述前驱体粉体和有机溶剂混合制成浆料；S4、将所述浆料涂抹于相适配的SiC包壳管和端塞之间，形成三明治连接结构；S5、将所述三明治连接结构进行高温固化裂解处理，使所述浆料形成紧密连接在所述SiC包壳管和端塞之间的连接层。本发明的碳化硅陶瓷连接方法，实现SiC包壳与端塞在低温(≤1500℃)、无压下高强连接，无需加入填料，减小中间连接层气孔缺陷，提高形成的接头气密性；连接工艺简单，连接工艺对设备要求低，降低成本。
Silicon carbide ceramic connection method and silicon carbide cladding
碳化硅陶瓷连接方法及碳化硅包壳
XUE JIAXIANG (author) / LIAO YEHONG (author) / LIU TONG (author) / REN QISEN (author) / ZHAI JIANHAN (author) / MA HAIBIN (author)
2021-05-07
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Silicon carbide cladding induction heating connection method and silicon carbide cladding
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