A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Silicon carbide ceramic slurry with high photosensitive activity and preparation method thereof
The invention discloses silicon carbide ceramic slurry with high photosensitive activity and a preparation method thereof. The silicon carbide ceramic slurry with high photosensitive activity is prepared from silicon carbide powder, boron carbide powder, an acrylic acid oligomer, a reactive diluent, a photoinitiator, a co-initiator and an auxiliary agent. The weight percentage content of the silicon carbide powder is 66%-72%, the weight percentage content of the boron carbide powder is 2%-2.2%, the weight percentage content of the acrylic acid oligomer is 2.1%-5.7%, the weight percentage content of the reactive diluent is 16.8%-24.9%, and the weight percentage content of the photoinitiator is 1.29%-1.71%. The photoinitiator is composed of a cracking type free radical photoinitiator, a hydrogen abstracting type free radical photoinitiator and a cationic photoinitiator. The silicon carbide ceramic slurry with high photosensitive activity provided by the invention can realize surface layer and deep layer curing under a UV LED cold light source with the wavelength of 385 nm and the minimum exposure power of 200 mw/cm <2>. The invention also provides a preparation method of the silicon carbide ceramic material.
一种高光敏活性的碳化硅陶瓷浆料及其制备方法，所述高光敏活性的碳化硅陶瓷浆料由碳化硅粉体，碳化硼粉体，丙烯酸低聚物，活性稀释剂，光引发剂，助引发剂，以及助剂组成。所述碳化硅粉体的重量百分比含量为66％～72％，所述碳化硼粉体的重量百分比含量为2％～2.2％，所述丙烯酸低聚物的重量百分比含量为2.1～5.7％，所述活性稀释剂的重量百分比含量为16.8％～24.9％，所述光引发剂的重量百分比含量为1.29％～1.71％。所述光引发剂由裂解型自由基光引发剂，夺氢型自由基光引发剂，以及阳离子光引发剂组成。本发明提供的高光敏活性的碳化硅陶瓷浆料可在385nm波长的UV LED冷光源下以最低200mw/cm2的曝光功率下实现表层与深层的固化。本发明还提供了一种碳化硅陶瓷材料的制备方法。
Silicon carbide ceramic slurry with high photosensitive activity and preparation method thereof
The invention discloses silicon carbide ceramic slurry with high photosensitive activity and a preparation method thereof. The silicon carbide ceramic slurry with high photosensitive activity is prepared from silicon carbide powder, boron carbide powder, an acrylic acid oligomer, a reactive diluent, a photoinitiator, a co-initiator and an auxiliary agent. The weight percentage content of the silicon carbide powder is 66%-72%, the weight percentage content of the boron carbide powder is 2%-2.2%, the weight percentage content of the acrylic acid oligomer is 2.1%-5.7%, the weight percentage content of the reactive diluent is 16.8%-24.9%, and the weight percentage content of the photoinitiator is 1.29%-1.71%. The photoinitiator is composed of a cracking type free radical photoinitiator, a hydrogen abstracting type free radical photoinitiator and a cationic photoinitiator. The silicon carbide ceramic slurry with high photosensitive activity provided by the invention can realize surface layer and deep layer curing under a UV LED cold light source with the wavelength of 385 nm and the minimum exposure power of 200 mw/cm <2>. The invention also provides a preparation method of the silicon carbide ceramic material.
一种高光敏活性的碳化硅陶瓷浆料及其制备方法，所述高光敏活性的碳化硅陶瓷浆料由碳化硅粉体，碳化硼粉体，丙烯酸低聚物，活性稀释剂，光引发剂，助引发剂，以及助剂组成。所述碳化硅粉体的重量百分比含量为66％～72％，所述碳化硼粉体的重量百分比含量为2％～2.2％，所述丙烯酸低聚物的重量百分比含量为2.1～5.7％，所述活性稀释剂的重量百分比含量为16.8％～24.9％，所述光引发剂的重量百分比含量为1.29％～1.71％。所述光引发剂由裂解型自由基光引发剂，夺氢型自由基光引发剂，以及阳离子光引发剂组成。本发明提供的高光敏活性的碳化硅陶瓷浆料可在385nm波长的UV LED冷光源下以最低200mw/cm2的曝光功率下实现表层与深层的固化。本发明还提供了一种碳化硅陶瓷材料的制备方法。
Silicon carbide ceramic slurry with high photosensitive activity and preparation method thereof
一种高光敏活性的碳化硅陶瓷浆料及其制备方法
ZHAO ZHE (author) / LI MING (author) / WANG ZHENGHAO (author)
2021-09-24
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
/
B33Y
ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
,
Additive (generative) Fertigung, d. h. die Herstellung von dreidimensionalen [3D] Bauteilen durch additive Abscheidung, additive Agglomeration oder additive Schichtung, z. B. durch 3D- Drucken, Stereolithografie oder selektives Lasersintern
| European Patent Office | 2021
| European Patent Office | 2024
Silicon carbide ceramic photocuring slurry and preparation method thereof
| European Patent Office | 2024
| European Patent Office | 2023
| European Patent Office | 2023