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Tantalum pentoxide-based ceramic with high density and high dielectric constant and preparation method thereof
The invention relates to the technical field of tantalum pentoxide ceramic preparation, and particularly discloses tantalum pentoxide-based ceramic with high density and high dielectric constant and a preparation method thereof. The tantalum pentoxide-based ceramic comprises a tantalum pentoxide matrix and a titanium dioxide dopant, wherein the content of the dopant is 0.00-0.11 mol% on the basis of the total molar weight of the tantalum pentoxide ceramic. By controlling the sintering parameters and the content of the dopant of the tantalum pentoxide-based ceramic and adopting discharge plasma sintering, the tantalum pentoxide-based ceramic is low in sintering temperature, high in temperature rise rate, short in sintering period and low in energy consumption; the obtained ceramic is high in density (99.45%); and the low-temperature sintered ceramic is good in integrity, basically free of cracking phenomenon and good in dielectric property, namely high dielectric constant (246.70) and extremely low dielectric loss (0.0024).
本发明涉及五氧化二钽陶瓷制备技术领域，具体公开了一种高致密度、高介电常数的五氧化二钽基陶瓷及其制备方法。本发明的五氧化二钽基陶瓷包含五氧化二钽基体和二氧化钛掺杂剂，以五氧化二钽陶瓷的总摩尔量为基准，所述掺杂剂含量为0.00‑0.11mol％。通过控制五氧化二钽基陶瓷的烧结参数和掺杂剂的含量，采用放电等离子体烧结，使得五氧化二钽陶瓷烧结温度低、升温速率快、烧结周期短、能耗低，所得的陶瓷致密度高(99.45％)，低温烧结陶瓷的完整性好，基本无开裂现象，且具有良好的介电性能，即高的介电常数(246.70)和极低的介电损耗(0.0024)。
Tantalum pentoxide-based ceramic with high density and high dielectric constant and preparation method thereof
The invention relates to the technical field of tantalum pentoxide ceramic preparation, and particularly discloses tantalum pentoxide-based ceramic with high density and high dielectric constant and a preparation method thereof. The tantalum pentoxide-based ceramic comprises a tantalum pentoxide matrix and a titanium dioxide dopant, wherein the content of the dopant is 0.00-0.11 mol% on the basis of the total molar weight of the tantalum pentoxide ceramic. By controlling the sintering parameters and the content of the dopant of the tantalum pentoxide-based ceramic and adopting discharge plasma sintering, the tantalum pentoxide-based ceramic is low in sintering temperature, high in temperature rise rate, short in sintering period and low in energy consumption; the obtained ceramic is high in density (99.45%); and the low-temperature sintered ceramic is good in integrity, basically free of cracking phenomenon and good in dielectric property, namely high dielectric constant (246.70) and extremely low dielectric loss (0.0024).
本发明涉及五氧化二钽陶瓷制备技术领域，具体公开了一种高致密度、高介电常数的五氧化二钽基陶瓷及其制备方法。本发明的五氧化二钽基陶瓷包含五氧化二钽基体和二氧化钛掺杂剂，以五氧化二钽陶瓷的总摩尔量为基准，所述掺杂剂含量为0.00‑0.11mol％。通过控制五氧化二钽基陶瓷的烧结参数和掺杂剂的含量，采用放电等离子体烧结，使得五氧化二钽陶瓷烧结温度低、升温速率快、烧结周期短、能耗低，所得的陶瓷致密度高(99.45％)，低温烧结陶瓷的完整性好，基本无开裂现象，且具有良好的介电性能，即高的介电常数(246.70)和极低的介电损耗(0.0024)。
Tantalum pentoxide-based ceramic with high density and high dielectric constant and preparation method thereof
一种高致密度、高介电常数的五氧化二钽基陶瓷及其制备方法
LIU SHIFENG (author) / WEN TINGTING (author) / DENG CHAO (author) / YANG SHUAI (author)
2021-10-08
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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