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ITO target material applied to heterojunction and preparation method of ITO target material
The invention discloses an ITO target material applied to heterojunction and a preparation method of the ITO target material. The preparation method comprises the steps of S1, ball-milling and uniformly mixing indium oxide powder and tin oxide powder to obtain ITO powder; S2, uniformly mixing the ITO powder, a dispersing agent, a sintering aid and deionized water to obtain slurry; S3, enabling the slurry to be subjected to spray granulation to obtain powder; S4, placing the powder in a mold to be subjected to compression molding, and obtaining a biscuit; and S5, sintering the biscuit in an oxygen atmosphere to obtain the ITO target material applied to the heterojunction. The ITO target material applied to the heterojunction has good density and breaking strength and low resistivity, the uniformity of the target material can be effectively improved by using the ternary sintering aid, the density and breaking strength of the target material are improved, and the resistivity is reduced.
本发明公开了一种应用于异质结的ITO靶材及其制备方法，包括以下步骤：S1、将氧化铟粉体、氧化锡粉体球磨混合均匀，得到ITO粉体；S2、将ITO粉体、分散剂、烧结助剂、去离子水混合均匀，得到浆料；S3、将所述浆料经过喷雾造粒，得到粉体；S4、将所述粉体置于模具中进行压制成型，得到素坯；S5、将素坯在氧气氛围下烧结，得到应用于异质结的ITO靶材。本发明所述的应用于异质结的ITO靶材具有良好的致密度、抗折强度以及低电阻率，通过使用所述的三元烧结助剂能够有效的提高靶材的均匀性，提高靶材的致密度、抗折强度，降低电阻率。
ITO target material applied to heterojunction and preparation method of ITO target material
The invention discloses an ITO target material applied to heterojunction and a preparation method of the ITO target material. The preparation method comprises the steps of S1, ball-milling and uniformly mixing indium oxide powder and tin oxide powder to obtain ITO powder; S2, uniformly mixing the ITO powder, a dispersing agent, a sintering aid and deionized water to obtain slurry; S3, enabling the slurry to be subjected to spray granulation to obtain powder; S4, placing the powder in a mold to be subjected to compression molding, and obtaining a biscuit; and S5, sintering the biscuit in an oxygen atmosphere to obtain the ITO target material applied to the heterojunction. The ITO target material applied to the heterojunction has good density and breaking strength and low resistivity, the uniformity of the target material can be effectively improved by using the ternary sintering aid, the density and breaking strength of the target material are improved, and the resistivity is reduced.
本发明公开了一种应用于异质结的ITO靶材及其制备方法，包括以下步骤：S1、将氧化铟粉体、氧化锡粉体球磨混合均匀，得到ITO粉体；S2、将ITO粉体、分散剂、烧结助剂、去离子水混合均匀，得到浆料；S3、将所述浆料经过喷雾造粒，得到粉体；S4、将所述粉体置于模具中进行压制成型，得到素坯；S5、将素坯在氧气氛围下烧结，得到应用于异质结的ITO靶材。本发明所述的应用于异质结的ITO靶材具有良好的致密度、抗折强度以及低电阻率，通过使用所述的三元烧结助剂能够有效的提高靶材的均匀性，提高靶材的致密度、抗折强度，降低电阻率。
ITO target material applied to heterojunction and preparation method of ITO target material
一种应用于异质结的ITO靶材及其制备方法
LEI YU (author) / ZHOU ZHIHONG (author) / XIAO SHIHONG (author) / LIU FANG (author)
2021-11-19
Patent
Electronic Resource
Chinese
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