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Preparation method of nanometer combined porous SiC ceramic powder
The invention provides a preparation method of nanometer combined porous SiC ceramic powder, belonging to the field of application of nanometer materials, ceramics and semiconductors. The preparation method comprises the following concrete steps: adding silicon carbide micropowder into an ethanol water solution, and carrying out ultrasonic stirring for 1-2 hours; preparing SiO2 sol in a mixed solution prepared in the previous step, and conducting drying to obtain nano-coated silicon carbide particles; fully dissolving polyethylene glycol 10000 in absolute ethyl alcohol, sequentially adding the treated silicon carbide particles and carbon powder, carrying out magnetic stirring for 1-2 hours, performing drying, adding PVA, and carrying out uniform mixing, sealing, standing, granulating and drying; and then carrying out heat treatment for 2-3 hours at a temperature of 1300-1500 DEG C in a vacuum protective atmosphere, conducting cooling to room temperature, and carrying out pressureless heat treatment for 2-3 hours at a temperature of 500-600 DEG C so as to obtain the nanometer combined porous SiC ceramic powder with reconstructed granularity. Through nanometer combination of SiO2 sol, polyethylene glycol 10000, carbon powder and the like, problems in reutilization of superfine SiC powder are solved, and the prepared silicon carbide powder is very high in purity, excellent in use performance and capable of being applied to the field of semiconductors and the like.
本发明提供了一种纳米结合多孔SiC陶瓷粉体的制备方法，属于纳米材料和陶瓷及半导体应用领域。具体制备方法的步骤为：将碳化硅微粉加入到乙醇水溶液中，超声搅拌1~2h；在上述混合溶液中配制SiO2溶胶，干燥后得到纳米包覆的碳化硅颗粒；将聚乙二醇10000充分溶于无水乙醇中，然后依次加入处理后的碳化硅颗粒、碳粉，磁力搅拌1~2h后干燥，加入PVA，混合均匀密封静置后进行制粒干燥；接着在真空保护气氛中1300~1500℃下进行热处理2~3h，冷却至室温后，在500~600℃进行无压热处理2~3h，得到粒度再造的纳米结合多孔SiC陶瓷粉体。本发明通过SiO2溶胶、聚乙二醇10000、碳粉等纳米结合，解决了SiC过细粉体的再利用问题，制备出的碳化硅粉体，纯度很高、使用性能优良，可应用在半导体等领域。
Preparation method of nanometer combined porous SiC ceramic powder
The invention provides a preparation method of nanometer combined porous SiC ceramic powder, belonging to the field of application of nanometer materials, ceramics and semiconductors. The preparation method comprises the following concrete steps: adding silicon carbide micropowder into an ethanol water solution, and carrying out ultrasonic stirring for 1-2 hours; preparing SiO2 sol in a mixed solution prepared in the previous step, and conducting drying to obtain nano-coated silicon carbide particles; fully dissolving polyethylene glycol 10000 in absolute ethyl alcohol, sequentially adding the treated silicon carbide particles and carbon powder, carrying out magnetic stirring for 1-2 hours, performing drying, adding PVA, and carrying out uniform mixing, sealing, standing, granulating and drying; and then carrying out heat treatment for 2-3 hours at a temperature of 1300-1500 DEG C in a vacuum protective atmosphere, conducting cooling to room temperature, and carrying out pressureless heat treatment for 2-3 hours at a temperature of 500-600 DEG C so as to obtain the nanometer combined porous SiC ceramic powder with reconstructed granularity. Through nanometer combination of SiO2 sol, polyethylene glycol 10000, carbon powder and the like, problems in reutilization of superfine SiC powder are solved, and the prepared silicon carbide powder is very high in purity, excellent in use performance and capable of being applied to the field of semiconductors and the like.
本发明提供了一种纳米结合多孔SiC陶瓷粉体的制备方法，属于纳米材料和陶瓷及半导体应用领域。具体制备方法的步骤为：将碳化硅微粉加入到乙醇水溶液中，超声搅拌1~2h；在上述混合溶液中配制SiO2溶胶，干燥后得到纳米包覆的碳化硅颗粒；将聚乙二醇10000充分溶于无水乙醇中，然后依次加入处理后的碳化硅颗粒、碳粉，磁力搅拌1~2h后干燥，加入PVA，混合均匀密封静置后进行制粒干燥；接着在真空保护气氛中1300~1500℃下进行热处理2~3h，冷却至室温后，在500~600℃进行无压热处理2~3h，得到粒度再造的纳米结合多孔SiC陶瓷粉体。本发明通过SiO2溶胶、聚乙二醇10000、碳粉等纳米结合，解决了SiC过细粉体的再利用问题，制备出的碳化硅粉体，纯度很高、使用性能优良，可应用在半导体等领域。
Preparation method of nanometer combined porous SiC ceramic powder
一种纳米结合多孔SiC陶瓷粉体的制备方法
LIU SHIKAI (author) / SONG ZHIJIAN (author) / CHEN YINGXIN (author) / WANG JIALIN (author) / WANG JIE (author) / ZHA SHUAILONG (author) / ZOU HUIPAN (author) / WANG HAORAN (author) / SUN YAGUANG (author)
2021-12-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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