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Anisotropic silicon carbide conductive ceramic and preparation method thereof
The invention relates to anisotropic silicon carbide conductive ceramic and a preparation method thereof. The anisotropic silicon carbide conductive ceramic comprises a SiC matrix, graphene nanosheets and a sintering aid, wherein the graphene nanosheets and the sintering aid are dispersed in the matrix, based on 100 wt% of the mass fraction, the mass fraction of the SiC matrix is 90.5-96.4 wt%, the mass fraction of GNPs is 2-8 wt%, and the balance is the sintering aid.
本发明涉及一种各向异性的碳化硅导电陶瓷及其制备方法。所述各向异性的碳化硅导电陶瓷包括：SiC基体、以及分散在基体中的石墨烯纳米片和烧结助剂；按质量分数100wt%计，所述SiC基体的质量分数为90.5～96.4wt%，GNPs的质量分数为2～8wt%，余量为烧结助剂。
Anisotropic silicon carbide conductive ceramic and preparation method thereof
The invention relates to anisotropic silicon carbide conductive ceramic and a preparation method thereof. The anisotropic silicon carbide conductive ceramic comprises a SiC matrix, graphene nanosheets and a sintering aid, wherein the graphene nanosheets and the sintering aid are dispersed in the matrix, based on 100 wt% of the mass fraction, the mass fraction of the SiC matrix is 90.5-96.4 wt%, the mass fraction of GNPs is 2-8 wt%, and the balance is the sintering aid.
本发明涉及一种各向异性的碳化硅导电陶瓷及其制备方法。所述各向异性的碳化硅导电陶瓷包括：SiC基体、以及分散在基体中的石墨烯纳米片和烧结助剂；按质量分数100wt%计，所述SiC基体的质量分数为90.5～96.4wt%，GNPs的质量分数为2～8wt%，余量为烧结助剂。
Anisotropic silicon carbide conductive ceramic and preparation method thereof
一种各向异性的碳化硅导电陶瓷及其制备方法
CHEN JIAN (author) / CHEN WENHUI (author) / HUANG ZHENGREN (author) / ZHU MING (author) / MA NINGNING (author)
2021-12-24
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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