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High-temperature wave-absorbing ceramic containing hafnium, silicon, boron, carbon and nitrogen and preparation method and application of high-temperature wave-absorbing ceramic
The invention provides a preparation method of wave-absorbing ceramic containing hafnium, silicon, boron, carbon and nitrogen, and belongs to the technical field of wave-absorbing materials. The preparation method comprises the following steps: firstly preparing a hyperbranched polymer, then crosslinking with tetra (diethylamino) hafnium, introducing hafnium element into the hyperbranched polymer to form a hafnium-containing polyborosilazane precursor, and finally realizing conversion from the precursor to ceramic through pyrolysis. The hafnium-containing polyborosilazane precursor obtained by the method is controllable in structure, and the hafnium-containing silicon boron carbon nitrogen ceramic obtained by pyrolysis can generate an HfC phase, an SiC phase and an HfB2 phase during high-temperature annealing. The in-situ generated multiphase ceramic integrates high temperature resistance and wave absorbing performance. The minimum reflection coefficient of the SiBCNHf (25) ceramic is 11.1 GHz, the thickness of the SiBCNHf (25) ceramic can reach-56.71 dB when the thickness of the SiBCNHf (25) ceramic is 2.5 mm, the effective absorption bandwidth of the SiBCNHf (25) ceramic can reach 3.4 GHz when the matching thickness of the SiBCNHf (25) ceramic is 2.70 mm at room temperature, and the effective absorption bandwidth of the SiBCNHf (25) ceramic can still cover 2.16 GHz at 600 DEG C.
本发明提供了一种含铪硅硼碳氮吸波陶瓷的制备方法，属于吸波材料技术领域。首先制备超支化聚合物，再与四(二乙基氨基)铪进行交联，将铪元素引入超支化聚合物中形成含铪聚硼硅氮烷前驱体，最后通过热解实现前驱体到陶瓷的转化。此方法获得的含铪聚硼硅氮烷前驱体结构可控，经热解得到的含铪硅硼碳氮陶瓷在高温退火时能够生成HfC相、SiC相、HfB2相。这种原位生成的多相陶瓷集耐高温性能和吸波性能于一体。SiBCNHf(25)陶瓷的最小反射系数在11.1GHz、厚度为2.5mm时可达‑56.71dB，室温下在匹配厚度为2.70mm时有效吸收带宽可达3.4GHz，其在600℃时有效吸收带宽仍可以覆盖2.16GHz。
High-temperature wave-absorbing ceramic containing hafnium, silicon, boron, carbon and nitrogen and preparation method and application of high-temperature wave-absorbing ceramic
The invention provides a preparation method of wave-absorbing ceramic containing hafnium, silicon, boron, carbon and nitrogen, and belongs to the technical field of wave-absorbing materials. The preparation method comprises the following steps: firstly preparing a hyperbranched polymer, then crosslinking with tetra (diethylamino) hafnium, introducing hafnium element into the hyperbranched polymer to form a hafnium-containing polyborosilazane precursor, and finally realizing conversion from the precursor to ceramic through pyrolysis. The hafnium-containing polyborosilazane precursor obtained by the method is controllable in structure, and the hafnium-containing silicon boron carbon nitrogen ceramic obtained by pyrolysis can generate an HfC phase, an SiC phase and an HfB2 phase during high-temperature annealing. The in-situ generated multiphase ceramic integrates high temperature resistance and wave absorbing performance. The minimum reflection coefficient of the SiBCNHf (25) ceramic is 11.1 GHz, the thickness of the SiBCNHf (25) ceramic can reach-56.71 dB when the thickness of the SiBCNHf (25) ceramic is 2.5 mm, the effective absorption bandwidth of the SiBCNHf (25) ceramic can reach 3.4 GHz when the matching thickness of the SiBCNHf (25) ceramic is 2.70 mm at room temperature, and the effective absorption bandwidth of the SiBCNHf (25) ceramic can still cover 2.16 GHz at 600 DEG C.
本发明提供了一种含铪硅硼碳氮吸波陶瓷的制备方法，属于吸波材料技术领域。首先制备超支化聚合物，再与四(二乙基氨基)铪进行交联，将铪元素引入超支化聚合物中形成含铪聚硼硅氮烷前驱体，最后通过热解实现前驱体到陶瓷的转化。此方法获得的含铪聚硼硅氮烷前驱体结构可控，经热解得到的含铪硅硼碳氮陶瓷在高温退火时能够生成HfC相、SiC相、HfB2相。这种原位生成的多相陶瓷集耐高温性能和吸波性能于一体。SiBCNHf(25)陶瓷的最小反射系数在11.1GHz、厚度为2.5mm时可达‑56.71dB，室温下在匹配厚度为2.70mm时有效吸收带宽可达3.4GHz，其在600℃时有效吸收带宽仍可以覆盖2.16GHz。
High-temperature wave-absorbing ceramic containing hafnium, silicon, boron, carbon and nitrogen and preparation method and application of high-temperature wave-absorbing ceramic
一种含铪硅硼碳氮高温吸波陶瓷及其制备方法和应用
KONG JIE (author) / SONG YAN (author) / LIU ZIYU (author) / ZHU RUNQIU (author)
2022-04-05
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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