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Rare earth doped zinc oxide voltage-sensitive ceramic, preparation method and application thereof
The invention relates to the technical field of semiconductor material preparation, in particular to a rare earth doped zinc oxide voltage-sensitive ceramic, a preparation method and application thereof.The rare earth doped zinc oxide voltage-sensitive ceramic is prepared through a flash sintering method, during flash sintering, a sample is placed in a tubular furnace, the two ends of the sample are connected with a direct-current power source to provide an electric field, heating is conducted at the heating rate of 10 DEG C/min, and the rare earth doped zinc oxide voltage-sensitive ceramic is obtained. And when the temperature of the sample reaches 950 DEG C, maintaining for 15 minutes, then applying an electric field of 150-300V/cm and an initial preset current of 0.5 A, when the electric field is applied, increasing the current by 0.5 A every 5s until a limiting current of 2.5 A is reached, then turning off a direct-current power supply, and cooling the sample to room temperature to obtain the rare earth doped zinc oxide voltage-sensitive ceramic. Compared with conventional sintering, the rapid sintering method can shorten the processing time by 15 times, so that the processing efficiency is greatly improved, and the processing cost is reduced. The problem that the final electrical property of a sintered sample becomes poor due to abnormal growth of zinc oxide voltage-sensitive ceramic grains caused by long sintering time at a high temperature is solved.
本发明涉及半导体材料制备技术领域，具体涉及一种稀土掺杂氧化锌压敏陶瓷、制备方法及其应用，用闪烧法制备了稀土掺杂氧化锌压敏陶瓷，在闪烧时，试样置于管式炉中，试样两端连接直流电源提供电场，以10℃/min的加热速率加热，当样品温度达到950℃时，保持15min后施加150V/cm～300V/cm的电场，初始预设电流为0.5A，当施加电场时，电流每5s增加0.5A直到达到限制电流2.5A，然后关闭直流电源，将样品冷却至室温得到这种稀土掺杂氧化锌压敏陶瓷，与常规烧结相比，这种快速烧结方法可将加工时间缩短15倍，解决了高温下较长的烧结时间会导致氧化锌压敏陶瓷晶粒异常生长，从而导致烧结样品的最终电学性能变差的问题。
Rare earth doped zinc oxide voltage-sensitive ceramic, preparation method and application thereof
The invention relates to the technical field of semiconductor material preparation, in particular to a rare earth doped zinc oxide voltage-sensitive ceramic, a preparation method and application thereof.The rare earth doped zinc oxide voltage-sensitive ceramic is prepared through a flash sintering method, during flash sintering, a sample is placed in a tubular furnace, the two ends of the sample are connected with a direct-current power source to provide an electric field, heating is conducted at the heating rate of 10 DEG C/min, and the rare earth doped zinc oxide voltage-sensitive ceramic is obtained. And when the temperature of the sample reaches 950 DEG C, maintaining for 15 minutes, then applying an electric field of 150-300V/cm and an initial preset current of 0.5 A, when the electric field is applied, increasing the current by 0.5 A every 5s until a limiting current of 2.5 A is reached, then turning off a direct-current power supply, and cooling the sample to room temperature to obtain the rare earth doped zinc oxide voltage-sensitive ceramic. Compared with conventional sintering, the rapid sintering method can shorten the processing time by 15 times, so that the processing efficiency is greatly improved, and the processing cost is reduced. The problem that the final electrical property of a sintered sample becomes poor due to abnormal growth of zinc oxide voltage-sensitive ceramic grains caused by long sintering time at a high temperature is solved.
本发明涉及半导体材料制备技术领域，具体涉及一种稀土掺杂氧化锌压敏陶瓷、制备方法及其应用，用闪烧法制备了稀土掺杂氧化锌压敏陶瓷，在闪烧时，试样置于管式炉中，试样两端连接直流电源提供电场，以10℃/min的加热速率加热，当样品温度达到950℃时，保持15min后施加150V/cm～300V/cm的电场，初始预设电流为0.5A，当施加电场时，电流每5s增加0.5A直到达到限制电流2.5A，然后关闭直流电源，将样品冷却至室温得到这种稀土掺杂氧化锌压敏陶瓷，与常规烧结相比，这种快速烧结方法可将加工时间缩短15倍，解决了高温下较长的烧结时间会导致氧化锌压敏陶瓷晶粒异常生长，从而导致烧结样品的最终电学性能变差的问题。
Rare earth doped zinc oxide voltage-sensitive ceramic, preparation method and application thereof
一种稀土掺杂氧化锌压敏陶瓷、制备方法及其应用
XU DONG (author) / JIANG MING (author) / ZHANG LEI (author) / SUN HUAWEI (author) / LIU JUAN (author) / LI JIAMAO (author)
2022-04-15
Patent
Electronic Resource
Chinese
Zinc oxide voltage-sensitive ceramic, preparation method and application thereof
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