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Method for producing sintered silicon nitride substrate
The invention provides a method for manufacturing a silicon nitride sintered substrate. Comprises: a step (a) for obtaining a mixed powder by mixing 80-98.3% by mass (inclusive) of an Si3N4 powder, 0.7-10% by mass (inclusive) of an Mg compound powder in terms of oxides, and 1-10% by mass (inclusive) of a compound powder of at least one rare earth element in terms of oxides; a step b in which the mixed powder is made into a slurry and molded into a plurality of green sheets; a step c for obtaining a laminated assembly by laminating the plurality of green sheets with the boron nitride powder layer interposed therebetween; and a step d in which the laminated assembly is placed in a sintering furnace and sintered. The thickness of the boron nitride powder layer in the step c is 3 [mu] m to 20 [mu] m (inclusive); the step (d) includes a step (d1) in which carbon is removed from the green sheet by holding the green sheet in a vacuum atmosphere of 80 Pa or less at an atmospheric temperature of 900-1300 DEG C, and a step (d2) in which the green sheet is sintered in a nitrogen atmosphere at an atmospheric temperature of 1600-2000 DEG C after the step (d1).
本发明提供一种氮化硅烧结基板的制造方法，包括：混合80质量％以上98.3质量％以下的Si3N4粉末、以氧化物换算计为0.7质量％以上10质量％以下的Mg化合物粉末和以氧化物换算计为1质量％以上10质量％以下的至少1种稀土元素的化合物粉末得到混合粉末的工序a；将混合粉末制成浆料并成型为多个生片的工序b；将多个生片隔着氮化硼粉末层叠层得到叠层组装体的工序c；和，将叠层组装体配置于烧结炉内并对叠层组装体进行烧结的工序d；在工序c中氮化硼粉末层的厚度为3μm以上20μm以下；工序d包括：在80Pa以下的真空气氛下保持900℃以上1300℃以下的气氛温度，从生片中除去碳的工序d1，和在工序d1之后在氮气氛下以1600℃以上2000℃以下的气氛温度使生片烧结的工序d2。
Method for producing sintered silicon nitride substrate
The invention provides a method for manufacturing a silicon nitride sintered substrate. Comprises: a step (a) for obtaining a mixed powder by mixing 80-98.3% by mass (inclusive) of an Si3N4 powder, 0.7-10% by mass (inclusive) of an Mg compound powder in terms of oxides, and 1-10% by mass (inclusive) of a compound powder of at least one rare earth element in terms of oxides; a step b in which the mixed powder is made into a slurry and molded into a plurality of green sheets; a step c for obtaining a laminated assembly by laminating the plurality of green sheets with the boron nitride powder layer interposed therebetween; and a step d in which the laminated assembly is placed in a sintering furnace and sintered. The thickness of the boron nitride powder layer in the step c is 3 [mu] m to 20 [mu] m (inclusive); the step (d) includes a step (d1) in which carbon is removed from the green sheet by holding the green sheet in a vacuum atmosphere of 80 Pa or less at an atmospheric temperature of 900-1300 DEG C, and a step (d2) in which the green sheet is sintered in a nitrogen atmosphere at an atmospheric temperature of 1600-2000 DEG C after the step (d1).
本发明提供一种氮化硅烧结基板的制造方法，包括：混合80质量％以上98.3质量％以下的Si3N4粉末、以氧化物换算计为0.7质量％以上10质量％以下的Mg化合物粉末和以氧化物换算计为1质量％以上10质量％以下的至少1种稀土元素的化合物粉末得到混合粉末的工序a；将混合粉末制成浆料并成型为多个生片的工序b；将多个生片隔着氮化硼粉末层叠层得到叠层组装体的工序c；和，将叠层组装体配置于烧结炉内并对叠层组装体进行烧结的工序d；在工序c中氮化硼粉末层的厚度为3μm以上20μm以下；工序d包括：在80Pa以下的真空气氛下保持900℃以上1300℃以下的气氛温度，从生片中除去碳的工序d1，和在工序d1之后在氮气氛下以1600℃以上2000℃以下的气氛温度使生片烧结的工序d2。
Method for producing sintered silicon nitride substrate
氮化硅烧结基板的制造方法
IMAMURA HISAYUKI (author) / FUJITA SUGURU (author) / KAGA YOICHIRO (author) / TEJIMA HIROYUKI (author) / HAMAYOSHI SHIGEYUKI (author)
2022-04-22
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2020
| European Patent Office | 2017
| European Patent Office | 2020
| European Patent Office | 2019