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Multi-layer aluminum oxide ceramic metallized tungsten slurry for HTCC and preparation method of multi-layer aluminum oxide ceramic metallized tungsten slurry
The invention discloses multilayer aluminum oxide ceramic metalized tungsten slurry for HTCC and a preparation method of the multilayer aluminum oxide ceramic metalized tungsten slurry, and belongs to the field of electronic components. The metalized tungsten slurry comprises 65%-90% of conductive metal tungsten powder, 0%-15% of an inorganic bonding phase and 10%-30% of an organic carrier. The particle size of the conductive metal tungsten powder is 0.5 mu m-2 mu m; the inorganic bonding phase comprises 92%-99% of Al2O3 powder and 1%-8% of a sintering aid; the organic carrier comprises 5%-35% of an organic adhesive, 5%-60% of a plasticizer and 5%-90% of a solvent. The preparation method comprises the steps of preparation of an inorganic bonding phase, preparation of a conductive metal tungsten powder mixture, preparation of an organic carrier, preparation of metallized tungsten slurry and the like. The problems that an existing metallized tungsten slurry is poor in universality, and material performance is difficult to consider are solved. And the composite material is widely applied to the fields of HTCC multilayer ceramic circuit boards, multilayer assemblies, integrated circuit substrates, packaging shells and the like.
一种HTCC用多层氧化铝陶瓷金属化钨浆及其制备方法，属于电子元器件领域。所述金属化钨浆包括65％～90％导电金属钨粉、0％～15％无机粘接相及10％～30％有机载体。所述导电金属钨粉粒径大小为0.5μm～2μm；所述无机粘接相包括：92％～99％的Al2O3粉，1％～8％的烧结助剂；所述有机载体包括：5％～35％的有机粘接剂，5％～60％的增塑剂和5％～90％溶剂组成。所述制备方法包括无机粘接相制备、导电金属钨粉混合物制备、有机载体的制备、金属化钨浆的制备等步骤。解决了现有金属化钨浆料通用性差，材料性能难以兼顾的问题。广泛应用于HTCC多层陶瓷电路板、多层组件、集成电路基板及封装外壳等领域。
Multi-layer aluminum oxide ceramic metallized tungsten slurry for HTCC and preparation method of multi-layer aluminum oxide ceramic metallized tungsten slurry
The invention discloses multilayer aluminum oxide ceramic metalized tungsten slurry for HTCC and a preparation method of the multilayer aluminum oxide ceramic metalized tungsten slurry, and belongs to the field of electronic components. The metalized tungsten slurry comprises 65%-90% of conductive metal tungsten powder, 0%-15% of an inorganic bonding phase and 10%-30% of an organic carrier. The particle size of the conductive metal tungsten powder is 0.5 mu m-2 mu m; the inorganic bonding phase comprises 92%-99% of Al2O3 powder and 1%-8% of a sintering aid; the organic carrier comprises 5%-35% of an organic adhesive, 5%-60% of a plasticizer and 5%-90% of a solvent. The preparation method comprises the steps of preparation of an inorganic bonding phase, preparation of a conductive metal tungsten powder mixture, preparation of an organic carrier, preparation of metallized tungsten slurry and the like. The problems that an existing metallized tungsten slurry is poor in universality, and material performance is difficult to consider are solved. And the composite material is widely applied to the fields of HTCC multilayer ceramic circuit boards, multilayer assemblies, integrated circuit substrates, packaging shells and the like.
一种HTCC用多层氧化铝陶瓷金属化钨浆及其制备方法，属于电子元器件领域。所述金属化钨浆包括65％～90％导电金属钨粉、0％～15％无机粘接相及10％～30％有机载体。所述导电金属钨粉粒径大小为0.5μm～2μm；所述无机粘接相包括：92％～99％的Al2O3粉，1％～8％的烧结助剂；所述有机载体包括：5％～35％的有机粘接剂，5％～60％的增塑剂和5％～90％溶剂组成。所述制备方法包括无机粘接相制备、导电金属钨粉混合物制备、有机载体的制备、金属化钨浆的制备等步骤。解决了现有金属化钨浆料通用性差，材料性能难以兼顾的问题。广泛应用于HTCC多层陶瓷电路板、多层组件、集成电路基板及封装外壳等领域。
Multi-layer aluminum oxide ceramic metallized tungsten slurry for HTCC and preparation method of multi-layer aluminum oxide ceramic metallized tungsten slurry
一种HTCC用多层氧化铝陶瓷金属化钨浆及其制备方法
SHU GUOJIN (author) / DOU ZHANMING (author) / HAN YUCHENG (author) / DU YULONG (author) / PANG JINBIAO (author) / YUAN SHIFENG (author) / LIU KAI (author) / AN JIAFANG (author)
2022-04-22
Patent
Electronic Resource
Chinese
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