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Method for controlling sintering size of ITO (Indium Tin Oxide) target material
The invention discloses an ITO (indium tin oxide) target material sintering size control method, which comprises the following steps of: airing a blank: placing an ITO target material blank for 5-10 days; aligning: placing the ITO target material green body on a load bearing plate; sintering: placing the setter plate in a sintering furnace, covering the sintering furnace with a furnace cover, and introducing oxygen into the sintering furnace; shrinking the plate: controlling the setter plate to gather together, and cooling and opening the furnace after sintering to obtain the ITO target material with the relative density greater than 90%; the shrinkage deviation in the vertical direction in the sintering process of the ITO target material blank is compensated, so that the prepared ITO target material is more uniform, and the magnetron sputtering utilization rate of the ITO target material is improved; in the plate shrinking step, an ITO target material sintering size control device is used, the device drives a control rod to move in the radial direction of a rotating disc through an arc-shaped groove in the rotating disc, free shrinking of a setter plate is achieved, and therefore the problem that the bottom of an ITO target material blank is insufficient in shrinking is solved.
本发明公开了一种ITO靶材烧结尺寸控制方法，本发明作为一种ITO靶材烧结尺寸控制方法，通过晾坯：将ITO靶材坯体，放置5‑10天；对位：将ITO靶材坯体放置在承烧板上；烧结：将承烧板放置在烧结炉内，盖上炉盖，向烧结炉内通入氧气；缩板：控制承烧板聚拢，烧结完成降温开炉，得到相对密度大于90％的ITO靶材；对ITO靶材坯体烧结过程中的垂直方向收缩偏差做出补偿，使制得ITO靶材更加均匀，从而提高ITO靶材磁控溅射的利用率；其中缩板步骤中使用一种ITO靶材烧结尺寸控制装置，此装置通过转动盘上的弧形槽带动控制杆沿转动盘的径向移动，实现承烧板的收缩自如，从而补偿ITO靶材坯体底部收缩不足的问题。
Method for controlling sintering size of ITO (Indium Tin Oxide) target material
The invention discloses an ITO (indium tin oxide) target material sintering size control method, which comprises the following steps of: airing a blank: placing an ITO target material blank for 5-10 days; aligning: placing the ITO target material green body on a load bearing plate; sintering: placing the setter plate in a sintering furnace, covering the sintering furnace with a furnace cover, and introducing oxygen into the sintering furnace; shrinking the plate: controlling the setter plate to gather together, and cooling and opening the furnace after sintering to obtain the ITO target material with the relative density greater than 90%; the shrinkage deviation in the vertical direction in the sintering process of the ITO target material blank is compensated, so that the prepared ITO target material is more uniform, and the magnetron sputtering utilization rate of the ITO target material is improved; in the plate shrinking step, an ITO target material sintering size control device is used, the device drives a control rod to move in the radial direction of a rotating disc through an arc-shaped groove in the rotating disc, free shrinking of a setter plate is achieved, and therefore the problem that the bottom of an ITO target material blank is insufficient in shrinking is solved.
本发明公开了一种ITO靶材烧结尺寸控制方法，本发明作为一种ITO靶材烧结尺寸控制方法，通过晾坯：将ITO靶材坯体，放置5‑10天；对位：将ITO靶材坯体放置在承烧板上；烧结：将承烧板放置在烧结炉内，盖上炉盖，向烧结炉内通入氧气；缩板：控制承烧板聚拢，烧结完成降温开炉，得到相对密度大于90％的ITO靶材；对ITO靶材坯体烧结过程中的垂直方向收缩偏差做出补偿，使制得ITO靶材更加均匀，从而提高ITO靶材磁控溅射的利用率；其中缩板步骤中使用一种ITO靶材烧结尺寸控制装置，此装置通过转动盘上的弧形槽带动控制杆沿转动盘的径向移动，实现承烧板的收缩自如，从而补偿ITO靶材坯体底部收缩不足的问题。
Method for controlling sintering size of ITO (Indium Tin Oxide) target material
一种ITO靶材烧结尺寸控制方法
TANG ANTAI (author)
2022-07-05
Patent
Electronic Resource
Chinese
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