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Preparation method of molybdenum-doped indium oxide target material, and molybdenum-doped indium oxide target material
The invention provides a preparation method of a molybdenum-doped indium oxide target material, and the molybdenum-doped indium oxide target material. The preparation method of the molybdenum-doped indium oxide target material comprises the following steps: carrying out two-stage grinding on raw materials of the target material to obtain slurry; granulating the slurry to obtain granules; and preparing the molybdenum-doped indium oxide target material from the granules, wherein the raw materials of the target material comprise indium oxide powder and molybdenum oxide powder. The step of performing two-stage grinding on the raw materials of the target material to obtain the slurry specifically comprises the following steps: treating the raw materials of the target material through a ball milling process to obtain first-stage slurry; and treating the first-stage slurry through a sand milling process and acquiring slurry with a median particle size ranging from 0.1 micrometer to 0.32 micrometer, wherein the treatment time of the ball milling process ranges from 12 h to 18 h, and a material concentration in the ball milling process is 40-50%. The target material is prepared by adopting the target material preparation method; the target material is high in density and good in component distribution uniformity; and a transparent conductive film prepared from the target material is beneficial to transmission of infrared band light.
本发明提供了一种掺杂钼的氧化铟靶材制备方法和掺杂钼的氧化铟靶材，其中，掺杂钼的氧化铟靶材制备方法包括：将靶材原料通过二段研磨，获取浆料；对浆料进行造粒，获取粒料；通过粒料制备获取掺杂钼的氧化铟靶材；其中，靶材原料包括氧化铟粉末和氧化钼粉末，其中，将靶材原料通过二段研磨，获取浆料的步骤，具体包括：通过球磨工艺处理靶材原料，获取一段浆料；通过砂磨工艺处理一段浆料，获取到中值粒径为0.1μm至0.32μm的浆料其中，球磨工艺的处理时长为12h至18h；球磨工艺中的物料浓度为40％至50％。靶材采用上述的靶材制备方法制备而成，该靶材致密度高，且成分分布均匀性好，用该靶材制备的透明导电薄膜有助于红外波段光的透射。
Preparation method of molybdenum-doped indium oxide target material, and molybdenum-doped indium oxide target material
The invention provides a preparation method of a molybdenum-doped indium oxide target material, and the molybdenum-doped indium oxide target material. The preparation method of the molybdenum-doped indium oxide target material comprises the following steps: carrying out two-stage grinding on raw materials of the target material to obtain slurry; granulating the slurry to obtain granules; and preparing the molybdenum-doped indium oxide target material from the granules, wherein the raw materials of the target material comprise indium oxide powder and molybdenum oxide powder. The step of performing two-stage grinding on the raw materials of the target material to obtain the slurry specifically comprises the following steps: treating the raw materials of the target material through a ball milling process to obtain first-stage slurry; and treating the first-stage slurry through a sand milling process and acquiring slurry with a median particle size ranging from 0.1 micrometer to 0.32 micrometer, wherein the treatment time of the ball milling process ranges from 12 h to 18 h, and a material concentration in the ball milling process is 40-50%. The target material is prepared by adopting the target material preparation method; the target material is high in density and good in component distribution uniformity; and a transparent conductive film prepared from the target material is beneficial to transmission of infrared band light.
本发明提供了一种掺杂钼的氧化铟靶材制备方法和掺杂钼的氧化铟靶材，其中，掺杂钼的氧化铟靶材制备方法包括：将靶材原料通过二段研磨，获取浆料；对浆料进行造粒，获取粒料；通过粒料制备获取掺杂钼的氧化铟靶材；其中，靶材原料包括氧化铟粉末和氧化钼粉末，其中，将靶材原料通过二段研磨，获取浆料的步骤，具体包括：通过球磨工艺处理靶材原料，获取一段浆料；通过砂磨工艺处理一段浆料，获取到中值粒径为0.1μm至0.32μm的浆料其中，球磨工艺的处理时长为12h至18h；球磨工艺中的物料浓度为40％至50％。靶材采用上述的靶材制备方法制备而成，该靶材致密度高，且成分分布均匀性好，用该靶材制备的透明导电薄膜有助于红外波段光的透射。
Preparation method of molybdenum-doped indium oxide target material, and molybdenum-doped indium oxide target material
掺杂钼的氧化铟靶材制备方法和掺杂钼的氧化铟靶材
LEI YU (author) / XU JIWEN (author) / ZHOU ZHIHONG (author) / XIAO SHIHONG (author) / ZHOU ZHAOYU (author) / YANG YONGTIAN (author)
2022-02-18
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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