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Wide-temperature-spectrum ceramic capacitor dielectric material and preparation method thereof
The invention belongs to the technical field of preparation of capacitor materials, and discloses a wide-temperature-spectrum ceramic capacitor dielectric material and a preparation method thereof. The material is prepared from the following components: BaTiO3, (Bi < 0.5 > Na < 0.5 >) TiO3 and Nb2O5, the chemical formula of the material is (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3, wherein x is equal to 0.01 to 0.25; 1.5 to 2 mol percent of Nb2O5 is doped in each 1 mol of the (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3; and preferably, x is 0.1. In addition, 0.2 to 0.8 mol percent of MgCO3 is further doped into each 1 mol of (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3; or 0.5 to 1.5 mol percent of Dy2O3 or Ho2O3 is further doped into each 1 mol of the (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3; or Dy2O3 and Ho2O3 are further doped into each 1 mol of the (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3, and the total doping amount of Dy2O3 and Ho2O3 is 1 mol%. The action rule of the doping elements (such as Nd, Mg, Dy, Ho and the like) on the BT-BNT system is obtained, the method has important significance on composition design of an ultrathin layer BME-MLCC material, and reference is provided for preparation of a high-capacity wide-temperature-spectrum MLCC.
本发明属于电容器材料的制备技术领域，公开了一种宽温谱陶瓷电容器介质材料及其制备方法。该材料的组成包括BaTiO3、(Bi0.5Na0.5)TiO3、Nb2O5；该材料的化学式为：(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3，其中x＝0.01～0.25；每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3掺入1.5～2mol％的Nb2O5；优选的，x为0.1。此外，每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3还掺入0.2～0.8mol％的MgCO3；或每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3还掺入0.5～1.5mol％的Dy2O3或Ho2O3；或每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3还掺入Dy2O3和Ho2O3，Dy2O3和Ho2O3的掺杂总量为1mol％。本发明得到掺杂元素(如Nd、Mg、Dy、Ho等)对BT‑BNT体系的作用规律，对于超薄层BME‑MLCC材料组成设计具有重要意义，为高容量宽温谱MLCC的制备提供参考。
Wide-temperature-spectrum ceramic capacitor dielectric material and preparation method thereof
The invention belongs to the technical field of preparation of capacitor materials, and discloses a wide-temperature-spectrum ceramic capacitor dielectric material and a preparation method thereof. The material is prepared from the following components: BaTiO3, (Bi < 0.5 > Na < 0.5 >) TiO3 and Nb2O5, the chemical formula of the material is (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3, wherein x is equal to 0.01 to 0.25; 1.5 to 2 mol percent of Nb2O5 is doped in each 1 mol of the (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3; and preferably, x is 0.1. In addition, 0.2 to 0.8 mol percent of MgCO3 is further doped into each 1 mol of (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3; or 0.5 to 1.5 mol percent of Dy2O3 or Ho2O3 is further doped into each 1 mol of the (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3; or Dy2O3 and Ho2O3 are further doped into each 1 mol of the (1-x) BaTiO3-x (Bi0. 5Na0. 5) TiO3, and the total doping amount of Dy2O3 and Ho2O3 is 1 mol%. The action rule of the doping elements (such as Nd, Mg, Dy, Ho and the like) on the BT-BNT system is obtained, the method has important significance on composition design of an ultrathin layer BME-MLCC material, and reference is provided for preparation of a high-capacity wide-temperature-spectrum MLCC.
本发明属于电容器材料的制备技术领域，公开了一种宽温谱陶瓷电容器介质材料及其制备方法。该材料的组成包括BaTiO3、(Bi0.5Na0.5)TiO3、Nb2O5；该材料的化学式为：(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3，其中x＝0.01～0.25；每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3掺入1.5～2mol％的Nb2O5；优选的，x为0.1。此外，每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3还掺入0.2～0.8mol％的MgCO3；或每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3还掺入0.5～1.5mol％的Dy2O3或Ho2O3；或每制备1mol的(1‑x)BaTiO3‑x(Bi0.5Na0.5)TiO3还掺入Dy2O3和Ho2O3，Dy2O3和Ho2O3的掺杂总量为1mol％。本发明得到掺杂元素(如Nd、Mg、Dy、Ho等)对BT‑BNT体系的作用规律，对于超薄层BME‑MLCC材料组成设计具有重要意义，为高容量宽温谱MLCC的制备提供参考。
Wide-temperature-spectrum ceramic capacitor dielectric material and preparation method thereof
一种宽温谱陶瓷电容器介质材料及其制备方法
ZHANG LEI (author) / PAN PENGFEI (author) / YU SHUHUI (author) / SUN RONG (author)
2022-07-29
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Ceramic dielectric material, ceramic capacitor and preparation method thereof
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Ceramic dielectric material, ceramic capacitor and preparation method thereof
| European Patent Office | 2022
| European Patent Office | 2024