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The invention discloses a preparation method of Sn-ion-doped BCZT-based high-energy-storage-density lead-free piezoelectric ceramics, and relates to the technical field of preparation of lead-free piezoelectric ceramics, and the preparation method comprises the following steps: a, zirconium oxide balls, raw materials and deionized water are mixed, ball-milled and then dried, and the raw materials comprise BaCO3, CaCO3, TiO2 and SnO2; b, calcining the mixture obtained by drying in the step a, and carrying out secondary ball milling on the obtained product; and c, adding paraffin into the mixture subjected to secondary ball milling in the step b, uniformly mixing, uniaxially pressing into a disc, and sintering to obtain the Sn ion doped BCZT-based leadless piezoelectric ceramic film. The prepared lead-free piezoelectric ceramic is subjected to inspection and electron microscope scanning imaging, the obtained picture observation shows that the grain size is uniform and controllable, the P-E hysteresis loop diagram shows that the recoverable energy density is large, the energy storage efficiency is high, and the lead-free piezoelectric ceramic can be applied to high-energy-storage capacitor devices.
本发明公开了一种Sn离子掺杂的BCZT基高储能密度无铅压电陶瓷制备方法，涉及无铅压电陶瓷制备技术领域，包括以下步骤：a，将氧化锆球、原料、去离子水混合后球磨，随后干燥，所述原料包括BaCO3、CaCO3、TiO2、SnO2；b，将步骤a干燥得到的混合物煅烧，所到产物二次球磨；c，在步骤b二次球磨后的混合物中加入石蜡，混合均匀，单轴压入盘中，烧结，得到Sn离子掺杂的BCZT基无铅压电陶瓷薄膜。本发明所制备的无铅压电陶瓷通过检验，电镜扫描成像，所得照片观察可发现晶粒尺寸均匀、大小可控，P‑E磁滞回线图可得其可恢复能量密度大、储能效率高有利于应用于高储能电容器件。
The invention discloses a preparation method of Sn-ion-doped BCZT-based high-energy-storage-density lead-free piezoelectric ceramics, and relates to the technical field of preparation of lead-free piezoelectric ceramics, and the preparation method comprises the following steps: a, zirconium oxide balls, raw materials and deionized water are mixed, ball-milled and then dried, and the raw materials comprise BaCO3, CaCO3, TiO2 and SnO2; b, calcining the mixture obtained by drying in the step a, and carrying out secondary ball milling on the obtained product; and c, adding paraffin into the mixture subjected to secondary ball milling in the step b, uniformly mixing, uniaxially pressing into a disc, and sintering to obtain the Sn ion doped BCZT-based leadless piezoelectric ceramic film. The prepared lead-free piezoelectric ceramic is subjected to inspection and electron microscope scanning imaging, the obtained picture observation shows that the grain size is uniform and controllable, the P-E hysteresis loop diagram shows that the recoverable energy density is large, the energy storage efficiency is high, and the lead-free piezoelectric ceramic can be applied to high-energy-storage capacitor devices.
本发明公开了一种Sn离子掺杂的BCZT基高储能密度无铅压电陶瓷制备方法，涉及无铅压电陶瓷制备技术领域，包括以下步骤：a，将氧化锆球、原料、去离子水混合后球磨，随后干燥，所述原料包括BaCO3、CaCO3、TiO2、SnO2；b，将步骤a干燥得到的混合物煅烧，所到产物二次球磨；c，在步骤b二次球磨后的混合物中加入石蜡，混合均匀，单轴压入盘中，烧结，得到Sn离子掺杂的BCZT基无铅压电陶瓷薄膜。本发明所制备的无铅压电陶瓷通过检验，电镜扫描成像，所得照片观察可发现晶粒尺寸均匀、大小可控，P‑E磁滞回线图可得其可恢复能量密度大、储能效率高有利于应用于高储能电容器件。
Preparation method of Sn-ion-doped BCZT-based high-energy-storage-density lead-free piezoelectric ceramic
一种Sn离子掺杂的BCZT基高储能密度无铅压电陶瓷制备方法
2022-08-02
Patent
Electronic Resource
Chinese
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