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Reduction-reoxidation preparation method of giant dielectric CCTO ceramic
The invention relates to the field of electronic ceramic components, and discloses a reduction-reoxidation preparation method of giant dielectric CCTO ceramic, a small amount of BN liquid phase sintering aid is added in the formula to reduce the sintering temperature, and at the same time, one or more of Al, Mg, Ni and other elements can be additionally added in the formula to adjust the dielectric constant and dielectric loss; inert gas or mixed gas of inert gas and hydrogen is firstly adopted for sintering, and meanwhile, powder burying or sealed sintering is combined to prevent a CCTO ceramic material from being decomposed and forming ceramic; then, by combining low-temperature re-oxidation treatment, the obtained CCTO ceramic has good electrical properties of giant dielectric and low loss; the reduction-reoxidation preparation process adopted by the invention can promote the multilayer chip element based on the CCTO ceramic material to adopt base metal Ni/Cu instead of noble metal Pd/Ag as an inner electrode, is beneficial to reducing the manufacturing cost of the multilayer chip element, and is suitable for large-scale production.
本发明涉及电子陶瓷元器件领域，公开了一种巨介电CCTO陶瓷的还原‑再氧化制备方法，配方中添加少量BN液相烧结助剂以降低烧结温度，同时，配方中可额外添加包含Al、Mg、Ni等元素中的一种或多种元素，以调节介电常数与介电损耗；本发明首先采用惰性气体或惰性气体与氢气的混合气体烧结，同时，结合埋粉或密封烧结，以阻止CCTO陶瓷材料分解并成瓷；然后，结合低温再氧化处理，获得的CCTO陶瓷具备巨介电、低损耗的良好电学性能；本发明所采用的还原‑再氧化法制备工艺，可推进基于CCTO陶瓷材料的多层片式元件采用贱金属Ni/Cu替代贵金属Pd/Ag作为内电极，有利于降低多层片式元件的制作成本，适于大规模生产。
Reduction-reoxidation preparation method of giant dielectric CCTO ceramic
The invention relates to the field of electronic ceramic components, and discloses a reduction-reoxidation preparation method of giant dielectric CCTO ceramic, a small amount of BN liquid phase sintering aid is added in the formula to reduce the sintering temperature, and at the same time, one or more of Al, Mg, Ni and other elements can be additionally added in the formula to adjust the dielectric constant and dielectric loss; inert gas or mixed gas of inert gas and hydrogen is firstly adopted for sintering, and meanwhile, powder burying or sealed sintering is combined to prevent a CCTO ceramic material from being decomposed and forming ceramic; then, by combining low-temperature re-oxidation treatment, the obtained CCTO ceramic has good electrical properties of giant dielectric and low loss; the reduction-reoxidation preparation process adopted by the invention can promote the multilayer chip element based on the CCTO ceramic material to adopt base metal Ni/Cu instead of noble metal Pd/Ag as an inner electrode, is beneficial to reducing the manufacturing cost of the multilayer chip element, and is suitable for large-scale production.
本发明涉及电子陶瓷元器件领域，公开了一种巨介电CCTO陶瓷的还原‑再氧化制备方法，配方中添加少量BN液相烧结助剂以降低烧结温度，同时，配方中可额外添加包含Al、Mg、Ni等元素中的一种或多种元素，以调节介电常数与介电损耗；本发明首先采用惰性气体或惰性气体与氢气的混合气体烧结，同时，结合埋粉或密封烧结，以阻止CCTO陶瓷材料分解并成瓷；然后，结合低温再氧化处理，获得的CCTO陶瓷具备巨介电、低损耗的良好电学性能；本发明所采用的还原‑再氧化法制备工艺，可推进基于CCTO陶瓷材料的多层片式元件采用贱金属Ni/Cu替代贵金属Pd/Ag作为内电极，有利于降低多层片式元件的制作成本，适于大规模生产。
Reduction-reoxidation preparation method of giant dielectric CCTO ceramic
一种巨介电CCTO陶瓷的还原-再氧化制备方法
ZU HAO (author) / HE XIAOJUAN (author) / ZHANG SHENG (author) / HUANG HUI (author) / WANG CHUANFENG (author) / LIU HUI (author) / BIAN JIAN (author) / TOYOTO (author) / YAN LIANG (author)
2022-08-30
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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