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Reduction-reoxidation preparation method of giant dielectric and low-loss CCTO ceramic
The invention relates to the field of novel electronic ceramic materials, and discloses a reduction-reoxidation preparation method of giant dielectric and low-loss CCTO ceramic, which adopts a single-doped or double-doped component design method for Cu site and Ti site in component design. A represents one of Sr, Mg and Ni, B represents one of Zr, Sn and Ge, x is larger than or equal to 0.00 and smaller than or equal to 0.30, y is larger than or equal to 0.05 and smaller than or equal to 0.20, and z is larger than or equal to 0.00 and smaller than or equal to 0.10. After the reduced CCTO ceramic is subjected to low-temperature reoxidation treatment, the dielectric loss is remarkably reduced, and meanwhile, the giant dielectric property is maintained. According to the invention, a tape casting process is utilized to prepare a green body, a reduction-reoxidation process is adopted to sinter, and the method is compatible with a multilayer chip element preparation process based on a base metal inner electrode. By adopting the preparation process and the material component design method disclosed by the invention, the multilayer chip CCTO ceramic element based on the base metal inner electrode, which can meet the actual application requirement, can be prepared.
本发明涉及新型电子陶瓷材料领域，公开了一种巨介电、低损耗CCTO陶瓷的还原‑再氧化制备方法，在组份设计上，针对Cu位、Ti位，采用单掺杂或双掺杂的成份设计方法。成份组成为：CaCu3‑xAxTi4‑yByO12+zBN，其中，A代表Sr、Mg、Ni中的一种，B代表Zr、Sn、Ge中的一种，0.00≤x≤0.30，0.05≤y≤0.20，0.00≤z≤0.10。还原的CCTO陶瓷经低温再氧化处理后，介电损耗显著降低，同时，维持巨介电特性。本发明利用流延工艺制备生坯，采用还原‑再氧化工艺烧结，与基于贱金属内电极的多层片式元件制备工艺相兼容。采用本发明的制备工艺与材料组份设计方法，可制备出能够满足实际应用要求的基于贱金属内电极的多层片式CCTO陶瓷元件。
Reduction-reoxidation preparation method of giant dielectric and low-loss CCTO ceramic
The invention relates to the field of novel electronic ceramic materials, and discloses a reduction-reoxidation preparation method of giant dielectric and low-loss CCTO ceramic, which adopts a single-doped or double-doped component design method for Cu site and Ti site in component design. A represents one of Sr, Mg and Ni, B represents one of Zr, Sn and Ge, x is larger than or equal to 0.00 and smaller than or equal to 0.30, y is larger than or equal to 0.05 and smaller than or equal to 0.20, and z is larger than or equal to 0.00 and smaller than or equal to 0.10. After the reduced CCTO ceramic is subjected to low-temperature reoxidation treatment, the dielectric loss is remarkably reduced, and meanwhile, the giant dielectric property is maintained. According to the invention, a tape casting process is utilized to prepare a green body, a reduction-reoxidation process is adopted to sinter, and the method is compatible with a multilayer chip element preparation process based on a base metal inner electrode. By adopting the preparation process and the material component design method disclosed by the invention, the multilayer chip CCTO ceramic element based on the base metal inner electrode, which can meet the actual application requirement, can be prepared.
本发明涉及新型电子陶瓷材料领域，公开了一种巨介电、低损耗CCTO陶瓷的还原‑再氧化制备方法，在组份设计上，针对Cu位、Ti位，采用单掺杂或双掺杂的成份设计方法。成份组成为：CaCu3‑xAxTi4‑yByO12+zBN，其中，A代表Sr、Mg、Ni中的一种，B代表Zr、Sn、Ge中的一种，0.00≤x≤0.30，0.05≤y≤0.20，0.00≤z≤0.10。还原的CCTO陶瓷经低温再氧化处理后，介电损耗显著降低，同时，维持巨介电特性。本发明利用流延工艺制备生坯，采用还原‑再氧化工艺烧结，与基于贱金属内电极的多层片式元件制备工艺相兼容。采用本发明的制备工艺与材料组份设计方法，可制备出能够满足实际应用要求的基于贱金属内电极的多层片式CCTO陶瓷元件。
Reduction-reoxidation preparation method of giant dielectric and low-loss CCTO ceramic
一种巨介电、低损耗CCTO陶瓷的还原-再氧化制备方法
ZU HAO (author) / WANG CHUANFENG (author) / DUAN HUIMIN (author) / ZHANG SHENG (author) / HUANG HUI (author) / HE XIAOJUAN (author) / LIU HUI (author) / BIAN JIAN (author) / TOYOTO (author) / YAN LIANG (author)
2022-12-30
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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