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Silicon carbide spatial body and method of forming spheroid
A spatial form of SiC starting material for spheroid growth. Methods of controlling vapor deposition growth of SiC spheroids and providing directional flux. A method of increasing the number of wafers, the number of electronic components, and the number of operable elements from a single spheroid growth cycle.
用于球状体生长的SiC起始材料的空间形体。控制SiC球状体的气相沉积生长及提供方向性通量的方法。自单一球状体生长循环增加晶圆的数量、电子部件的数量及可操作性元件的数量的方法。
Silicon carbide spatial body and method of forming spheroid
A spatial form of SiC starting material for spheroid growth. Methods of controlling vapor deposition growth of SiC spheroids and providing directional flux. A method of increasing the number of wafers, the number of electronic components, and the number of operable elements from a single spheroid growth cycle.
用于球状体生长的SiC起始材料的空间形体。控制SiC球状体的气相沉积生长及提供方向性通量的方法。自单一球状体生长循环增加晶圆的数量、电子部件的数量及可操作性元件的数量的方法。
Silicon carbide spatial body and method of forming spheroid
碳化硅空间形体及形成球状体的方法
DUKES DOUGLAS (author) / SANDGREN GLENN (author) / HOPKINS ANDREW R (author) / BURLINGHAM ISABELLE (author) / LAND MARK S (author)
2023-01-13
Patent
Electronic Resource
Chinese
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