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Long SiCf/SiC composite material cladding (PyC/SiC) n multilayer interface layer and preparation method thereof
The invention relates to a long-size SiCf/SiC composite material cladding (PyC/SiC) n multi-layer interface layer and a preparation method thereof, the (PyC/SiC) n multi-layer interface layer is located between SiC fibers and a SiC matrix, the (PyC/SiC) n multi-layer interface layer is formed by alternately depositing PyC interface layers and SiC interface layers in sequence from inside to outside, n in the (PyC/SiC) n multi-layer interface layer is the number of times of alternately depositing the PyC interface layers and the SiC interface layers, the range of n is 1-3, and the number of times of alternately depositing the SiC interface layers and the PyC interface layers is 1-3. The total thickness of the (PyC/SiC) n multi-layer interface layer is 100 nm to 1000 nm, and the (PyC/SiC) n multi-layer interface layer is prepared by adopting a chemical vapor deposition process. Compared with the prior art, the method has the advantages that the (PyC/SiC) n multi-layer interface layer formed by the PyC interface layer and the SiC interface layer is prepared through alternate deposition of the CVD process tool, uniform deposition of the (PyC/SiC) n multi-layer interface layer is achieved, and the oxidation resistance, the interface stability and the mechanical property of the SiCf/SiC composite material cladding are also improved.
本发明涉及一种长尺寸SiCf/SiC复合材料包壳(PyC/SiC)n多层界面层及其制备方法，(PyC/SiC)n多层界面层位于SiC纤维和SiC基体之间，其由内向外依次由PyC界面层和SiC界面层交替沉积组成，所述(PyC/SiC)n多层界面层中的n为PyC界面层和SiC界面层交替沉积的次数，n的范围为1‑3，所述(PyC/SiC)n多层界面层的总厚度为100nm～1000nm，所述(PyC/SiC)n多层界面层采用化学气相沉积工艺制备。与现有技术相比，本发明通过CVD工艺工装交替沉积制备PyC界面层和SiC界面层形成的(PyC/SiC)n多层界面层，实现了(PyC/SiC)n多层界面层的均匀沉积，也提高了SiCf/SiC复合材料包壳的抗氧化性能、界面稳定性和力学性能。
Long SiCf/SiC composite material cladding (PyC/SiC) n multilayer interface layer and preparation method thereof
The invention relates to a long-size SiCf/SiC composite material cladding (PyC/SiC) n multi-layer interface layer and a preparation method thereof, the (PyC/SiC) n multi-layer interface layer is located between SiC fibers and a SiC matrix, the (PyC/SiC) n multi-layer interface layer is formed by alternately depositing PyC interface layers and SiC interface layers in sequence from inside to outside, n in the (PyC/SiC) n multi-layer interface layer is the number of times of alternately depositing the PyC interface layers and the SiC interface layers, the range of n is 1-3, and the number of times of alternately depositing the SiC interface layers and the PyC interface layers is 1-3. The total thickness of the (PyC/SiC) n multi-layer interface layer is 100 nm to 1000 nm, and the (PyC/SiC) n multi-layer interface layer is prepared by adopting a chemical vapor deposition process. Compared with the prior art, the method has the advantages that the (PyC/SiC) n multi-layer interface layer formed by the PyC interface layer and the SiC interface layer is prepared through alternate deposition of the CVD process tool, uniform deposition of the (PyC/SiC) n multi-layer interface layer is achieved, and the oxidation resistance, the interface stability and the mechanical property of the SiCf/SiC composite material cladding are also improved.
本发明涉及一种长尺寸SiCf/SiC复合材料包壳(PyC/SiC)n多层界面层及其制备方法，(PyC/SiC)n多层界面层位于SiC纤维和SiC基体之间，其由内向外依次由PyC界面层和SiC界面层交替沉积组成，所述(PyC/SiC)n多层界面层中的n为PyC界面层和SiC界面层交替沉积的次数，n的范围为1‑3，所述(PyC/SiC)n多层界面层的总厚度为100nm～1000nm，所述(PyC/SiC)n多层界面层采用化学气相沉积工艺制备。与现有技术相比，本发明通过CVD工艺工装交替沉积制备PyC界面层和SiC界面层形成的(PyC/SiC)n多层界面层，实现了(PyC/SiC)n多层界面层的均匀沉积，也提高了SiCf/SiC复合材料包壳的抗氧化性能、界面稳定性和力学性能。
Long SiCf/SiC composite material cladding (PyC/SiC) n multilayer interface layer and preparation method thereof
一种长尺寸SiCf/SiC复合材料包壳(PyC/SiC)n多层界面层及其制备方法
TANG ZHEPENG (author) / DONG KAI (author) / WANG MENGQIAN (author) / LIU KUN (author) / CHENG RENZHENG (author) / XIE YUHUI (author)
2023-01-17
Patent
Electronic Resource
Chinese
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