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Porous silicon carbide high-temperature heat insulation tile and preparation method thereof
The preparation method comprises the following steps: 1) carrying out ball-milling mixing on PVG powder and SiC (rGO) p ceramic filler powder, drying and grinding, adding a graphite powder pore-forming agent, and uniformly mixing to obtain SiC (rGO) p/PVG/C mixed powder; (2) pouring the SiC (rGO) p/PVG/C mixed powder into a mold, carrying out compression molding, demolding, putting into a crucible padded with graphite paper, and carrying out high-temperature re-cracking in a tubular furnace under the protection of an inert atmosphere to obtain a SiC (rGO)/C ceramic wafer; (3) the SiC (rGO)/C ceramic wafer is placed in an air furnace to be subjected to carbon removal and pore forming, SiC (rGO) x porous ceramic is obtained, and x represents the mass fraction of the added pore forming agent; and (4) dipping the SiC (rGO) x porous ceramic into silica sol, taking out the SiC (rGO) x porous ceramic, and carrying out high-temperature cracking under the protection of an inert atmosphere to obtain the repaired porous silicon carbide high-temperature heat-insulating tile material.
一种多孔碳化硅高温隔热瓦及其制备方法，1)将PVG粉末和SiC(rGO)p陶瓷填料粉末球磨混合，干燥研磨，加入石墨粉造孔剂，均匀混合得SiC(rGO)p/PVG/C混合粉末；2)将SiC(rGO)p/PVG/C混合粉末倒入模具，压制成型，脱模后置入垫有石墨纸的坩埚，于惰性气氛保护下在管式炉中高温再裂解，得到SiC(rGO)/C陶瓷片；3)将SiC(rGO)/C陶瓷片置于空气炉中进行除碳并且造孔，得到SiC(rGO)x多孔陶瓷，其中x代表添加造孔剂的质量分数；4)将SiC(rGO)x多孔陶瓷浸渍于硅溶胶中，取出于惰性气氛保护下高温裂解，得到修复后的多孔碳化硅高温隔热瓦材料。
Porous silicon carbide high-temperature heat insulation tile and preparation method thereof
The preparation method comprises the following steps: 1) carrying out ball-milling mixing on PVG powder and SiC (rGO) p ceramic filler powder, drying and grinding, adding a graphite powder pore-forming agent, and uniformly mixing to obtain SiC (rGO) p/PVG/C mixed powder; (2) pouring the SiC (rGO) p/PVG/C mixed powder into a mold, carrying out compression molding, demolding, putting into a crucible padded with graphite paper, and carrying out high-temperature re-cracking in a tubular furnace under the protection of an inert atmosphere to obtain a SiC (rGO)/C ceramic wafer; (3) the SiC (rGO)/C ceramic wafer is placed in an air furnace to be subjected to carbon removal and pore forming, SiC (rGO) x porous ceramic is obtained, and x represents the mass fraction of the added pore forming agent; and (4) dipping the SiC (rGO) x porous ceramic into silica sol, taking out the SiC (rGO) x porous ceramic, and carrying out high-temperature cracking under the protection of an inert atmosphere to obtain the repaired porous silicon carbide high-temperature heat-insulating tile material.
一种多孔碳化硅高温隔热瓦及其制备方法，1)将PVG粉末和SiC(rGO)p陶瓷填料粉末球磨混合，干燥研磨，加入石墨粉造孔剂，均匀混合得SiC(rGO)p/PVG/C混合粉末；2)将SiC(rGO)p/PVG/C混合粉末倒入模具，压制成型，脱模后置入垫有石墨纸的坩埚，于惰性气氛保护下在管式炉中高温再裂解，得到SiC(rGO)/C陶瓷片；3)将SiC(rGO)/C陶瓷片置于空气炉中进行除碳并且造孔，得到SiC(rGO)x多孔陶瓷，其中x代表添加造孔剂的质量分数；4)将SiC(rGO)x多孔陶瓷浸渍于硅溶胶中，取出于惰性气氛保护下高温裂解，得到修复后的多孔碳化硅高温隔热瓦材料。
Porous silicon carbide high-temperature heat insulation tile and preparation method thereof
一种多孔碳化硅高温隔热瓦及其制备方法
YAO RONGQIAN (author) / HUANG WENYAN (author) / ZHENG YINONG (author) / LIANG JIAHAO (author) / GUAN YAWEN (author) / MAO SHENGJIAN (author) / WU YUFAN (author) / PAN CHENG (author)
2023-04-04
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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