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Graphite composite crucible containing silicon carbide coating as well as preparation method and application of graphite composite crucible
The invention relates to a graphite composite crucible containing a silicon carbide coating as well as a preparation method and application of the graphite composite crucible. The preparation method comprises the following steps: (1) carrying out heat treatment on an inner cavity of the graphite crucible in an oxygen-containing atmosphere; and (2) after the heat treatment is completed, the SiC coating is formed on the surface of the inner cavity of the graphite crucible through physical gas phase transmission, and the graphite composite crucible containing the silicon carbide coating is obtained. The prepared graphite composite crucible containing the silicon carbide coating can serve as a container and a Si source for growing SiC single crystals through a TSSG method, the content of the Si element in the growth process can be stabilized, and the graphite composite crucible is suitable for stably growing the SiC single crystals for a long time.
本发明涉及一种含碳化硅涂层的石墨复合坩埚及其制备方法与应用，所述制备方法包括如下步骤：（1）含氧气氛下热处理石墨坩埚的内腔；（2）热处理完成后，通过物理气相传输于石墨坩埚的内腔表面形成SiC涂层，得到所述含碳化硅涂层的石墨复合坩埚。本发明制备得到的含碳化硅涂层的石墨复合坩埚可以作为TSSG法生长SiC单晶的容器和Si源，能够稳定生长过程中Si元素的含量，适合长时间稳定生长SiC单晶。
Graphite composite crucible containing silicon carbide coating as well as preparation method and application of graphite composite crucible
The invention relates to a graphite composite crucible containing a silicon carbide coating as well as a preparation method and application of the graphite composite crucible. The preparation method comprises the following steps: (1) carrying out heat treatment on an inner cavity of the graphite crucible in an oxygen-containing atmosphere; and (2) after the heat treatment is completed, the SiC coating is formed on the surface of the inner cavity of the graphite crucible through physical gas phase transmission, and the graphite composite crucible containing the silicon carbide coating is obtained. The prepared graphite composite crucible containing the silicon carbide coating can serve as a container and a Si source for growing SiC single crystals through a TSSG method, the content of the Si element in the growth process can be stabilized, and the graphite composite crucible is suitable for stably growing the SiC single crystals for a long time.
本发明涉及一种含碳化硅涂层的石墨复合坩埚及其制备方法与应用，所述制备方法包括如下步骤：（1）含氧气氛下热处理石墨坩埚的内腔；（2）热处理完成后，通过物理气相传输于石墨坩埚的内腔表面形成SiC涂层，得到所述含碳化硅涂层的石墨复合坩埚。本发明制备得到的含碳化硅涂层的石墨复合坩埚可以作为TSSG法生长SiC单晶的容器和Si源，能够稳定生长过程中Si元素的含量，适合长时间稳定生长SiC单晶。
Graphite composite crucible containing silicon carbide coating as well as preparation method and application of graphite composite crucible
一种含碳化硅涂层的石墨复合坩埚及其制备方法与应用
HUANG XIUSONG (author) / GUO CHAO (author) / MU FENGWEN (author)
2023-04-18
Patent
Electronic Resource
Chinese
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