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Silicon carbide and graphite composite crucible as well as preparation method and application thereof
The invention relates to a silicon carbide and graphite composite crucible as well as a preparation method and application thereof. The preparation method comprises the following steps: (1) carrying out heat treatment on an inner cavity of a graphite crucible in an oxygen-containing atmosphere; (2) after the heat treatment is completed, coating silicon-containing slurry on the surface of the inner cavity, drying and curing to obtain a silicon-containing coating; and (3) heating the graphite crucible in a vacuum environment, and cooling to obtain the silicon carbide graphite composite crucible. The silicon carbide-graphite composite crucible prepared by the invention can be used as a container and a Si source for growing SiC single crystal by a TSSG method, can stabilize the content of Si element in the growth process, and is suitable for long-time stable growth of SiC single crystal.
本发明涉及一种碳化硅石墨复合坩埚及其制备方法与应用，所述制备方法包括如下步骤：（1）含氧气氛下热处理石墨坩埚的内腔；（2）热处理完成后，内腔表面涂覆含硅浆料，烘干固化，得到含硅涂层；（3）真空环境下加热石墨坩埚，冷却后，得到所述碳化硅石墨复合坩埚。本发明制备得到的碳化硅石墨复合坩埚可以作为TSSG法生长SiC单晶的容器和Si源，能够稳定生长过程中Si元素的含量，适合长时间稳定生长SiC单晶。
Silicon carbide and graphite composite crucible as well as preparation method and application thereof
The invention relates to a silicon carbide and graphite composite crucible as well as a preparation method and application thereof. The preparation method comprises the following steps: (1) carrying out heat treatment on an inner cavity of a graphite crucible in an oxygen-containing atmosphere; (2) after the heat treatment is completed, coating silicon-containing slurry on the surface of the inner cavity, drying and curing to obtain a silicon-containing coating; and (3) heating the graphite crucible in a vacuum environment, and cooling to obtain the silicon carbide graphite composite crucible. The silicon carbide-graphite composite crucible prepared by the invention can be used as a container and a Si source for growing SiC single crystal by a TSSG method, can stabilize the content of Si element in the growth process, and is suitable for long-time stable growth of SiC single crystal.
本发明涉及一种碳化硅石墨复合坩埚及其制备方法与应用，所述制备方法包括如下步骤：（1）含氧气氛下热处理石墨坩埚的内腔；（2）热处理完成后，内腔表面涂覆含硅浆料，烘干固化，得到含硅涂层；（3）真空环境下加热石墨坩埚，冷却后，得到所述碳化硅石墨复合坩埚。本发明制备得到的碳化硅石墨复合坩埚可以作为TSSG法生长SiC单晶的容器和Si源，能够稳定生长过程中Si元素的含量，适合长时间稳定生长SiC单晶。
Silicon carbide and graphite composite crucible as well as preparation method and application thereof
一种碳化硅石墨复合坩埚及其制备方法与应用
HUANG XIUSONG (author) / GUO CHAO (author) / MU FENGWEN (author)
2023-04-18
Patent
Electronic Resource
Chinese
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