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Hf-doped gallium oxide thin film and preparation method and application thereof
The invention discloses an Hf-doped gallium oxide thin film and a preparation method and application thereof. The preparation method comprises the following steps: depositing an Hf-doped gallium oxide film on a substrate by using a target material containing gallium oxide and Hf and a coating process; the Hf doping concentration in the gallium oxide thin film is less than 3% in molar ratio. The Hf-doped gallium oxide thin film comprises a thin film substrate and a doping component doped in the thin film substrate, the material of the thin film substrate comprises gallium oxide, the doping component comprises an Hf element, and the doping concentration of Hf is less than 3% molar ratio. The preparation method provided by the invention is simple and easy to implement, the resistivity, the carrier concentration and the carrier mobility of the gallium oxide thin film can be stably regulated and controlled, the gallium oxide thin film can adapt to substrates made of various materials, preparation can be realized by homoepitaxy and heteroepitaxy, and the prepared gallium oxide thin film has the characteristics of low resistivity and high transmittance.
本发明公开了一种Hf掺杂的氧化镓薄膜、其制备方法与应用。所述制备方法包括：利用包含氧化镓和Hf的靶材及镀膜工艺，在基底上沉积形成Hf掺杂的氧化镓薄膜；所述氧化镓薄膜中的Hf掺杂浓度在3％摩尔比以下。所述Hf掺杂的氧化镓薄膜包括薄膜基体以及掺杂于所述薄膜基体中的掺杂组分；所述薄膜基体的材质包括氧化镓，所述掺杂组分包括Hf元素，并且Hf的掺杂浓度在3％摩尔比以下。本发明提供的制备方法简便易行，通过可以稳定调控氧化镓薄膜的电阻率、载流子浓度、载流子迁移率，能够适应多种材质的基底，同质外延和异质外延皆可实现制备，所制得的氧化镓薄膜具有低电阻率以及高透过率的特点。
Hf-doped gallium oxide thin film and preparation method and application thereof
The invention discloses an Hf-doped gallium oxide thin film and a preparation method and application thereof. The preparation method comprises the following steps: depositing an Hf-doped gallium oxide film on a substrate by using a target material containing gallium oxide and Hf and a coating process; the Hf doping concentration in the gallium oxide thin film is less than 3% in molar ratio. The Hf-doped gallium oxide thin film comprises a thin film substrate and a doping component doped in the thin film substrate, the material of the thin film substrate comprises gallium oxide, the doping component comprises an Hf element, and the doping concentration of Hf is less than 3% molar ratio. The preparation method provided by the invention is simple and easy to implement, the resistivity, the carrier concentration and the carrier mobility of the gallium oxide thin film can be stably regulated and controlled, the gallium oxide thin film can adapt to substrates made of various materials, preparation can be realized by homoepitaxy and heteroepitaxy, and the prepared gallium oxide thin film has the characteristics of low resistivity and high transmittance.
本发明公开了一种Hf掺杂的氧化镓薄膜、其制备方法与应用。所述制备方法包括：利用包含氧化镓和Hf的靶材及镀膜工艺，在基底上沉积形成Hf掺杂的氧化镓薄膜；所述氧化镓薄膜中的Hf掺杂浓度在3％摩尔比以下。所述Hf掺杂的氧化镓薄膜包括薄膜基体以及掺杂于所述薄膜基体中的掺杂组分；所述薄膜基体的材质包括氧化镓，所述掺杂组分包括Hf元素，并且Hf的掺杂浓度在3％摩尔比以下。本发明提供的制备方法简便易行，通过可以稳定调控氧化镓薄膜的电阻率、载流子浓度、载流子迁移率，能够适应多种材质的基底，同质外延和异质外延皆可实现制备，所制得的氧化镓薄膜具有低电阻率以及高透过率的特点。
Hf-doped gallium oxide thin film and preparation method and application thereof
Hf掺杂的氧化镓薄膜、其制备方法与应用
ZHANG WENRUI (author) / WU SIMIAO (author) / LIU NINGTAO (author) / YE JICHUN (author)
2023-04-18
Patent
Electronic Resource
Chinese
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