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Two-step sintering method for fine-grain submicron structure ceramic
According to the technical scheme, the two-step sintering method is characterized in that sintering is carried out at the temperature T1 and heat preservation is carried out for 5-15 min, sintering is carried out at the temperature T2 and heat preservation is carried out for 18-22 h, the temperature T1 ranges from 1540 DEG C to 1560 DEG C, and the temperature T2 ranges from 1450 DEG C to 1470 DEG C. According to the sintering process, common heating equipment is used for heating, the performance can be consistent with that of expensive equipment such as hot-pressing equipment, microwave equipment, discharging equipment and vacuum equipment, and the investment is small; according to a conventional one-step sintering method, at the end of sintering, due to temperature rise, grain boundary migration is too fast, and grain growth is caused, while according to a two-step sintering method, boundary migration can be restrained within a set temperature range (a dynamic window), grain boundary diffusion is increased, and density is increased; and as the T2 temperature is subjected to grain boundary diffusion in a sintering dynamic window range, the growth of grains is inhibited, the grains are promoted to grow fine and have good compactness, and the product has better toughness and mechanical properties.
本发明公开了细晶亚微米结构陶瓷两步烧结法,其技术方案要点是:在T1温度下烧结并保温5‑15min,在T2温度下烧结并保温18‑22h,所述T1温度为1540℃‑1560℃,所述T2温度为1450℃‑1470℃。本烧结工艺用普通加热设备进行加热,性能可达到与热压,微波,放电,真空等昂贵设备相一致的产品,投资小;常规的一步烧结法在烧结最后由于温度升高会导致晶界迁移过快引起晶粒的长大,而两部烧结法可以在设定的温度范围内(动力学窗口)抑制境界的迁移,增加晶界的扩散增加致密度;由于T2温度在烧结动力学窗口范围内进行了晶界的扩散,抑制了晶粒的长大,促使晶粒发育细小致密性好,产品具有较好的韧性和力学性能。
Two-step sintering method for fine-grain submicron structure ceramic
According to the technical scheme, the two-step sintering method is characterized in that sintering is carried out at the temperature T1 and heat preservation is carried out for 5-15 min, sintering is carried out at the temperature T2 and heat preservation is carried out for 18-22 h, the temperature T1 ranges from 1540 DEG C to 1560 DEG C, and the temperature T2 ranges from 1450 DEG C to 1470 DEG C. According to the sintering process, common heating equipment is used for heating, the performance can be consistent with that of expensive equipment such as hot-pressing equipment, microwave equipment, discharging equipment and vacuum equipment, and the investment is small; according to a conventional one-step sintering method, at the end of sintering, due to temperature rise, grain boundary migration is too fast, and grain growth is caused, while according to a two-step sintering method, boundary migration can be restrained within a set temperature range (a dynamic window), grain boundary diffusion is increased, and density is increased; and as the T2 temperature is subjected to grain boundary diffusion in a sintering dynamic window range, the growth of grains is inhibited, the grains are promoted to grow fine and have good compactness, and the product has better toughness and mechanical properties.
本发明公开了细晶亚微米结构陶瓷两步烧结法,其技术方案要点是:在T1温度下烧结并保温5‑15min,在T2温度下烧结并保温18‑22h,所述T1温度为1540℃‑1560℃,所述T2温度为1450℃‑1470℃。本烧结工艺用普通加热设备进行加热,性能可达到与热压,微波,放电,真空等昂贵设备相一致的产品,投资小;常规的一步烧结法在烧结最后由于温度升高会导致晶界迁移过快引起晶粒的长大,而两部烧结法可以在设定的温度范围内(动力学窗口)抑制境界的迁移,增加晶界的扩散增加致密度;由于T2温度在烧结动力学窗口范围内进行了晶界的扩散,抑制了晶粒的长大,促使晶粒发育细小致密性好,产品具有较好的韧性和力学性能。
Two-step sintering method for fine-grain submicron structure ceramic
细晶亚微米结构陶瓷两步烧结法
CAO ZHEN (author) / LIU YUSHENG (author) / CHEN YONG (author)
2023-06-30
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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