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Piezoresistor and preparation process thereof
The invention provides a piezoresistor and a preparation process thereof, and relates to the technical field of semiconductor electronic materials. The ceramic material system of the piezoresistor is prepared from the following raw materials in parts by weight: 80 to 93 parts of zinc oxide, 2 to 6 parts of bismuth trioxide, 1 to 6 parts of antimony trioxide, 0 to 2 parts of chromium sesquioxide, 0.5 to 0.7 part of manganese dioxide, 0.5 to 2.5 parts of titanium dioxide, 0.5 to 1 part of cobalt sesquioxide, 0.5 to 3 parts of silicon dioxide, 0.4 to 0.6 part of nickel oxide, 0.05 to 0.08 part of aluminum nitrate, 0.05 to 0.825 part of indium oxide and 0.05 to 0.1 part of yttrium oxide. The piezoresistor ceramic disclosed by the invention has the characteristics of high gradient, low residual voltage, large through-current capacity, small leakage current and stable aging performance.
本发明提供一种压敏电阻器及其制备工艺，涉及半导体电子材料技术领域。其中，以重量份数计，压敏电阻器的瓷料体系的原料组成包括：氧化锌80‑93份、三氧化二铋2‑6份、三氧化二锑1‑6份、三氧化二铬0‑2份、二氧化锰0.5‑0.7份、二氧化钛0.5‑2.5份、三氧化二钴0.5‑1份、二氧化硅0.5‑3份、氧化镍0.4‑0.6份、硝酸铝0.05‑0.08份、氧化铟0.05‑0.825份和三氧化二钇0.05‑0.1份。本发明的压敏电阻器陶瓷具备梯度高、残压低、通流容量大、泄露电流小、老化性能稳定的特点。
Piezoresistor and preparation process thereof
The invention provides a piezoresistor and a preparation process thereof, and relates to the technical field of semiconductor electronic materials. The ceramic material system of the piezoresistor is prepared from the following raw materials in parts by weight: 80 to 93 parts of zinc oxide, 2 to 6 parts of bismuth trioxide, 1 to 6 parts of antimony trioxide, 0 to 2 parts of chromium sesquioxide, 0.5 to 0.7 part of manganese dioxide, 0.5 to 2.5 parts of titanium dioxide, 0.5 to 1 part of cobalt sesquioxide, 0.5 to 3 parts of silicon dioxide, 0.4 to 0.6 part of nickel oxide, 0.05 to 0.08 part of aluminum nitrate, 0.05 to 0.825 part of indium oxide and 0.05 to 0.1 part of yttrium oxide. The piezoresistor ceramic disclosed by the invention has the characteristics of high gradient, low residual voltage, large through-current capacity, small leakage current and stable aging performance.
本发明提供一种压敏电阻器及其制备工艺，涉及半导体电子材料技术领域。其中，以重量份数计，压敏电阻器的瓷料体系的原料组成包括：氧化锌80‑93份、三氧化二铋2‑6份、三氧化二锑1‑6份、三氧化二铬0‑2份、二氧化锰0.5‑0.7份、二氧化钛0.5‑2.5份、三氧化二钴0.5‑1份、二氧化硅0.5‑3份、氧化镍0.4‑0.6份、硝酸铝0.05‑0.08份、氧化铟0.05‑0.825份和三氧化二钇0.05‑0.1份。本发明的压敏电阻器陶瓷具备梯度高、残压低、通流容量大、泄露电流小、老化性能稳定的特点。
Piezoresistor and preparation process thereof
一种压敏电阻器及其制备工艺
WANG RONGGUI (author) / WANG YUJUE (author)
2023-08-01
Patent
Electronic Resource
Chinese
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