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Preparation method of silicon carbide series piezoresistor
The invention relates to the technical field of varistors, in particular to a preparation method of a silicon carbide series varistor, which is characterized in that nano silicon dioxide is adopted, so that nitrogen atoms can be fully and uniformly doped in the synthesis process of silicon carbide, and the conductivity of semiconductive silicon carbide powder is improved; silicon dioxide is adopted as a liquid-phase adhesive to promote bonding of silicon carbide powder into ceramic in the sintering process, meanwhile, liquid-phase sintering is formed to promote growth of silicon carbide crystal grains, aluminum powder or boron powder is adopted as an acceptor doping reagent, the surfaces of the crystal grains can be fully doped, and therefore the resistivity of the crystal boundary is improved, and the performance of the silicon carbide ceramic is improved. And the core-shell structure with the conductive grain boundary insulation of the crystal grains is formed, so that the application scene of a large-scale high-voltage electronic circuit can be better met.
本发明涉及压敏电阻技术领域，具体涉及一种碳化硅系压敏电阻的制备方法，本申请通过采用纳米二氧化硅可使得氮原子在碳化硅的合成过程中对其进行充分均匀的掺杂，提升半导化碳化硅粉体的导电率；通过采用二氧化硅作为液相粘接剂促进碳化硅粉体在烧结过程中粘结成瓷，同时形成液相助烧促进碳化硅晶粒长大，并通过采用铝粉或硼粉作为受主掺杂试剂，可充分对晶粒表面进行掺杂，从而提升晶界的电阻率，形成晶粒导电晶界绝缘的核壳结构，从而以更好地满足大型高压电子电路的应用场景。
Preparation method of silicon carbide series piezoresistor
The invention relates to the technical field of varistors, in particular to a preparation method of a silicon carbide series varistor, which is characterized in that nano silicon dioxide is adopted, so that nitrogen atoms can be fully and uniformly doped in the synthesis process of silicon carbide, and the conductivity of semiconductive silicon carbide powder is improved; silicon dioxide is adopted as a liquid-phase adhesive to promote bonding of silicon carbide powder into ceramic in the sintering process, meanwhile, liquid-phase sintering is formed to promote growth of silicon carbide crystal grains, aluminum powder or boron powder is adopted as an acceptor doping reagent, the surfaces of the crystal grains can be fully doped, and therefore the resistivity of the crystal boundary is improved, and the performance of the silicon carbide ceramic is improved. And the core-shell structure with the conductive grain boundary insulation of the crystal grains is formed, so that the application scene of a large-scale high-voltage electronic circuit can be better met.
本发明涉及压敏电阻技术领域，具体涉及一种碳化硅系压敏电阻的制备方法，本申请通过采用纳米二氧化硅可使得氮原子在碳化硅的合成过程中对其进行充分均匀的掺杂，提升半导化碳化硅粉体的导电率；通过采用二氧化硅作为液相粘接剂促进碳化硅粉体在烧结过程中粘结成瓷，同时形成液相助烧促进碳化硅晶粒长大，并通过采用铝粉或硼粉作为受主掺杂试剂，可充分对晶粒表面进行掺杂，从而提升晶界的电阻率，形成晶粒导电晶界绝缘的核壳结构，从而以更好地满足大型高压电子电路的应用场景。
Preparation method of silicon carbide series piezoresistor
一种碳化硅系压敏电阻的制备方法
WANG HAIZHEN (author) / LIAO HANQING (author) / XIE QINGJIAN (author) / LI MENG (author) / WANG YAPING (author)
2023-04-28
Patent
Electronic Resource
Chinese
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