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Ceramic sintered body and substrate for semiconductor device
The ceramic sintered body according to the present invention comprises: alumina; the present invention relates to a ceramic sintered body which contains Si and Si, and a glass component that contains silica and manganese, the ceramic sintered body having a bonding layer on the surface side, the bonding layer having a peak value of Mn concentration, and the ratio of the peak value of Mn to the peak value of Si in the depth direction of the bonding layer being 1.0-7.0.
本发明所涉及的陶瓷烧结体包括：氧化铝；及玻璃成分，含有二氧化硅和锰，所述陶瓷烧结体在表面侧具有结合层，该结合层具有Mn的浓度的峰值，所述结合层的深度方向上的Mn的峰值相对于Si的峰值的比例为1.0～7.0。
Ceramic sintered body and substrate for semiconductor device
The ceramic sintered body according to the present invention comprises: alumina; the present invention relates to a ceramic sintered body which contains Si and Si, and a glass component that contains silica and manganese, the ceramic sintered body having a bonding layer on the surface side, the bonding layer having a peak value of Mn concentration, and the ratio of the peak value of Mn to the peak value of Si in the depth direction of the bonding layer being 1.0-7.0.
本发明所涉及的陶瓷烧结体包括：氧化铝；及玻璃成分，含有二氧化硅和锰，所述陶瓷烧结体在表面侧具有结合层，该结合层具有Mn的浓度的峰值，所述结合层的深度方向上的Mn的峰值相对于Si的峰值的比例为1.0～7.0。
Ceramic sintered body and substrate for semiconductor device
陶瓷烧结体及半导体装置用基板
OGATA TAKATOMO (author)
2023-10-20
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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