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Silicon nitride ceramic and method for preparing silicon nitride ceramic through auxiliary sintering of silicide
The invention relates to a method for preparing a silicon nitride ceramic substrate by silicide-assisted sintering and silicon nitride ceramic prepared by the method. The silicon nitride ceramic substrate is prepared from the following components in molar percentage: 89 mol% of silicon nitride and 3 to 11 mol% of sintering aid. The magnesium silicide is used for replacing traditional magnesium oxide, so that the heat conductivity and the mechanical property of the silicon nitride ceramic are efficiently optimized, and the problem that high heat conductivity and high mechanical property of existing air pressure sintered silicon nitride are difficult to achieve at the same time is solved. After air pressure sintering, the thermal conductivity of the prepared silicon nitride ceramic can reach 98.35 W.m <-1 >. K <-1 >, the Vickers hardness can reach 12.10 +/-0.14 GPa, and the fracture toughness can reach 6.88 +/-0.17 MPa.m < 1/2 >.
本申请涉及硅化物辅助烧结制备氮化硅陶瓷基板的方法，以及该方法制备的氮化硅陶瓷。该氮化硅陶瓷基板照摩尔百分含量计算，包括如下组分：氮化硅：89mol％，烧结助剂：3～11mol％。本发明通过使用硅化镁替代传统的氧化镁，高效优化了氮化硅陶瓷的热导率和力学性能，解决了目前气压烧结氮化硅热导率高热导率和高力学性能难以兼得的问题。经过气压烧结后，制得的氮化硅陶瓷热导率可达98.35W·m‑1·K‑1，维氏硬度可达12.10±0.14GPa，断裂韧性可达6.88±0.17MPa·m1/2。
Silicon nitride ceramic and method for preparing silicon nitride ceramic through auxiliary sintering of silicide
The invention relates to a method for preparing a silicon nitride ceramic substrate by silicide-assisted sintering and silicon nitride ceramic prepared by the method. The silicon nitride ceramic substrate is prepared from the following components in molar percentage: 89 mol% of silicon nitride and 3 to 11 mol% of sintering aid. The magnesium silicide is used for replacing traditional magnesium oxide, so that the heat conductivity and the mechanical property of the silicon nitride ceramic are efficiently optimized, and the problem that high heat conductivity and high mechanical property of existing air pressure sintered silicon nitride are difficult to achieve at the same time is solved. After air pressure sintering, the thermal conductivity of the prepared silicon nitride ceramic can reach 98.35 W.m <-1 >. K <-1 >, the Vickers hardness can reach 12.10 +/-0.14 GPa, and the fracture toughness can reach 6.88 +/-0.17 MPa.m < 1/2 >.
本申请涉及硅化物辅助烧结制备氮化硅陶瓷基板的方法，以及该方法制备的氮化硅陶瓷。该氮化硅陶瓷基板照摩尔百分含量计算，包括如下组分：氮化硅：89mol％，烧结助剂：3～11mol％。本发明通过使用硅化镁替代传统的氧化镁，高效优化了氮化硅陶瓷的热导率和力学性能，解决了目前气压烧结氮化硅热导率高热导率和高力学性能难以兼得的问题。经过气压烧结后，制得的氮化硅陶瓷热导率可达98.35W·m‑1·K‑1，维氏硬度可达12.10±0.14GPa，断裂韧性可达6.88±0.17MPa·m1/2。
Silicon nitride ceramic and method for preparing silicon nitride ceramic through auxiliary sintering of silicide
氮化硅陶瓷和硅化物辅助烧结制备氮化硅陶瓷的方法
SHI YING (author) / HU CHUANGCHUANG (author) / XIE JIANJUN (author) / LEI FANG (author) / ZHANG LEI (author) / FAN LINGCONG (author)
2023-10-31
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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