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Tungsten-doped indium oxide target material and preparation method and application thereof
The invention discloses a tungsten-doped indium oxide target material and a preparation method and application thereof.The preparation method comprises the steps that ammonia gas is introduced into an indium metal salt solution for a gas-liquid precipitation reaction to obtain indium hydroxide precursor slurry, solid-liquid separation is conducted to obtain indium hydroxide powder, the indium hydroxide powder is calcined to obtain indium oxide powder, and the tungsten-doped indium oxide target material is obtained; the preparation method comprises the following steps: carrying out wet ball milling on indium hydroxide powder, indium oxide powder and tungsten oxide powder to obtain a ball milling material, granulating the ball milling material to obtain granulated powder, carrying out compression molding on the granulated powder to obtain a green body, and sintering the green body in an oxygen atmosphere to obtain the IWO target material with the relative density of 60-64%. According to the preparation method, a dispersing agent and a binding agent are not added, a degreasing process is not needed, the quality of a target material product is controlled while the preparation process is simplified, and the provided IWO target material has a uniform porous structure, is not prone to cracking and has a good coating characteristic. The preparation method disclosed by the invention has the advantages of simple process flow, low cost, low carbon, environment friendliness and controllable product performance.
本发明公开了一种钨掺杂氧化铟靶材及其制备方法和应用，将氨气通入铟金属盐溶液中进行气液沉淀反应获得氢氧化铟前躯体浆料，固液分离获得氢氧化铟粉体，将氢氧化铟粉体煅烧获得氧化铟粉体，将氢氧化铟粉末、氧化铟粉体、氧化钨粉末进行湿法球磨，获得球磨料，将球磨料进行造粒获得造粒粉体，造粒粉体压制成型获得生坯，将生坯于氧气气氛下烧结即得相对密度60～64％的IWO靶材。本发明中的制备方法，未加分散剂和粘结剂，无需脱脂工序，简化制备流程的同时有利于控制靶材产品的品质，所提供的IWO靶材，具有均匀多孔结构、不易开裂及良好的镀膜特性。本发明的制备工艺流程简单、成本低，低碳环保且产品性能可控的优势。
Tungsten-doped indium oxide target material and preparation method and application thereof
The invention discloses a tungsten-doped indium oxide target material and a preparation method and application thereof.The preparation method comprises the steps that ammonia gas is introduced into an indium metal salt solution for a gas-liquid precipitation reaction to obtain indium hydroxide precursor slurry, solid-liquid separation is conducted to obtain indium hydroxide powder, the indium hydroxide powder is calcined to obtain indium oxide powder, and the tungsten-doped indium oxide target material is obtained; the preparation method comprises the following steps: carrying out wet ball milling on indium hydroxide powder, indium oxide powder and tungsten oxide powder to obtain a ball milling material, granulating the ball milling material to obtain granulated powder, carrying out compression molding on the granulated powder to obtain a green body, and sintering the green body in an oxygen atmosphere to obtain the IWO target material with the relative density of 60-64%. According to the preparation method, a dispersing agent and a binding agent are not added, a degreasing process is not needed, the quality of a target material product is controlled while the preparation process is simplified, and the provided IWO target material has a uniform porous structure, is not prone to cracking and has a good coating characteristic. The preparation method disclosed by the invention has the advantages of simple process flow, low cost, low carbon, environment friendliness and controllable product performance.
本发明公开了一种钨掺杂氧化铟靶材及其制备方法和应用，将氨气通入铟金属盐溶液中进行气液沉淀反应获得氢氧化铟前躯体浆料，固液分离获得氢氧化铟粉体，将氢氧化铟粉体煅烧获得氧化铟粉体，将氢氧化铟粉末、氧化铟粉体、氧化钨粉末进行湿法球磨，获得球磨料，将球磨料进行造粒获得造粒粉体，造粒粉体压制成型获得生坯，将生坯于氧气气氛下烧结即得相对密度60～64％的IWO靶材。本发明中的制备方法，未加分散剂和粘结剂，无需脱脂工序，简化制备流程的同时有利于控制靶材产品的品质，所提供的IWO靶材，具有均匀多孔结构、不易开裂及良好的镀膜特性。本发明的制备工艺流程简单、成本低，低碳环保且产品性能可控的优势。
Tungsten-doped indium oxide target material and preparation method and application thereof
一种钨掺杂氧化铟靶材及其制备方法和应用
MEI FANGSHENG (author) / CHEN MINGWEI (author) / CUI YAN (author)
2023-11-14
Patent
Electronic Resource
Chinese
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