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Tungsten-doped indium oxide target material with thickness of more than 100mm and preparation method of tungsten-doped indium oxide target material
The invention belongs to the technical field of target material preparation, and discloses a tungsten-doped indium oxide target material with the thickness larger than 100 mm and a preparation method thereof.The preparation method of the tungsten-doped indium oxide target material with the thickness larger than 100 mm comprises the following steps that 1, tungsten oxide powder and indium oxide powder are evenly mixed to obtain mixed powder; 2, the mixed powder is subjected to cold pressing, and a cold-pressed biscuit is obtained; 3, the cold-pressed biscuit is subjected to hot pressing sintering, and the tungsten-doped indium oxide target material is obtained; the particle size of the indium oxide powder is 1-10 [mu] m; the tungsten oxide powder is divided into first tungsten oxide powder, second tungsten oxide powder and third tungsten oxide powder, the particle size of the first tungsten oxide powder is 10-12 microns, the particle size of the second tungsten oxide powder is 5-8 microns, and the particle size of the third tungsten oxide powder is 1-3 microns; the mass ratio of the first tungsten oxide powder to the second tungsten oxide powder to the third tungsten oxide powder is 1: (4-5): (2-2.5).
本发明属于靶材制备技术领域，公开了一种厚度大于100mm的掺钨氧化铟靶材及其制备方法，该一种厚度大于100mm的掺钨氧化铟靶材的制备方法，包括如下步骤：步骤1：将氧化钨粉末和氧化铟粉末混合均匀得到混合粉末；步骤2：将混合粉末进行冷压得到冷压素坯；步骤3：将冷压素坯进行热压烧结得到掺钨氧化铟靶材；所述氧化铟粉末粒径为1‑10μm；所述氧化钨粉末分为第一氧化钨粉末、第二氧化钨粉末和第三氧化钨粉末，所述第一氧化钨粉末的粒径为10‑12μm，所述第二氧化钨粉末的粒径为5‑8μm，所述第三氧化钨粉末的粒径为1‑3μm，所述第一氧化钨粉末、第二氧化钨粉末和第三氧化钨粉末的质量比为1：4‑5：2‑2.5。
Tungsten-doped indium oxide target material with thickness of more than 100mm and preparation method of tungsten-doped indium oxide target material
The invention belongs to the technical field of target material preparation, and discloses a tungsten-doped indium oxide target material with the thickness larger than 100 mm and a preparation method thereof.The preparation method of the tungsten-doped indium oxide target material with the thickness larger than 100 mm comprises the following steps that 1, tungsten oxide powder and indium oxide powder are evenly mixed to obtain mixed powder; 2, the mixed powder is subjected to cold pressing, and a cold-pressed biscuit is obtained; 3, the cold-pressed biscuit is subjected to hot pressing sintering, and the tungsten-doped indium oxide target material is obtained; the particle size of the indium oxide powder is 1-10 [mu] m; the tungsten oxide powder is divided into first tungsten oxide powder, second tungsten oxide powder and third tungsten oxide powder, the particle size of the first tungsten oxide powder is 10-12 microns, the particle size of the second tungsten oxide powder is 5-8 microns, and the particle size of the third tungsten oxide powder is 1-3 microns; the mass ratio of the first tungsten oxide powder to the second tungsten oxide powder to the third tungsten oxide powder is 1: (4-5): (2-2.5).
本发明属于靶材制备技术领域，公开了一种厚度大于100mm的掺钨氧化铟靶材及其制备方法，该一种厚度大于100mm的掺钨氧化铟靶材的制备方法，包括如下步骤：步骤1：将氧化钨粉末和氧化铟粉末混合均匀得到混合粉末；步骤2：将混合粉末进行冷压得到冷压素坯；步骤3：将冷压素坯进行热压烧结得到掺钨氧化铟靶材；所述氧化铟粉末粒径为1‑10μm；所述氧化钨粉末分为第一氧化钨粉末、第二氧化钨粉末和第三氧化钨粉末，所述第一氧化钨粉末的粒径为10‑12μm，所述第二氧化钨粉末的粒径为5‑8μm，所述第三氧化钨粉末的粒径为1‑3μm，所述第一氧化钨粉末、第二氧化钨粉末和第三氧化钨粉末的质量比为1：4‑5：2‑2.5。
Tungsten-doped indium oxide target material with thickness of more than 100mm and preparation method of tungsten-doped indium oxide target material
一种厚度大于100mm的掺钨氧化铟靶材及其制备方法
YU FANG (author) / TONG PEIYUN (author) / ZHU LIU (author)
2024-12-20
Patent
Electronic Resource
Chinese
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