A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Silicon carbide ceramic joint as well as preparation method and application thereof
The invention belongs to the technical field of ceramic welding, and discloses a silicon carbide ceramic joint and a preparation method and application thereof.The method comprises the steps that a to-be-welded area of pre-oxidized SiC ceramic is coated with a welding flux formed by mixing phenolic resin and a solvent, an obtained to-be-connected assembly is subjected to heat treatment in a nitrogen atmosphere at the temperature of 1550-1650 DEG C under the pressure of 0.01-0.5 MPa, and then the to-be-connected assembly is obtained; and coating the Si slurry on the outer surface of the welding part of the pre-connecting piece, and carrying out heat treatment at 1550-1700 DEG C under the pressure of 0.05-1 MPa to obtain the silicon carbide ceramic joint. The thickness of a connector of the silicon carbide ceramic connecting piece is 20-100 microns, the helium leakage rate of the connector is 5.0 * 10 <-12 >-1.0 * 10 <-9 > Pa.m < 3 >/s, the shear strength of the connector at room temperature is 40-80 MPa, the shear strength of the connector at the nitrogen atmosphere of 1200 DEG C is 50-100 MPa, and the silicon carbide ceramic connecting piece is applied to the field of high-temperature heat exchange or space remote sensing.
本发明属于陶瓷焊接技术领域，公开了一种碳化硅陶瓷接头及其制备方法和应用，该方法将酚醛树脂与溶剂混合的焊剂涂敷于预氧化的SiC陶瓷的待焊接区域，将得到待连接组件在0.01～0.5MPa的压力下，在氮气气氛中1550～1650℃热处理，将Si浆涂于预连接件的焊接部位外表面，在0.05～1MPa的压力下1550～1700℃热处理，得到碳化硅陶瓷接头。该碳化硅陶瓷连接件的接头厚度为20～100μm，接头氦漏率为5.0×10‑12～1.0×10‑9Pa·m3/s，接头在室温下的剪切强度为40～80MPa，在1200℃氮气气氛下的剪切强度为50～100MPa，应用在高温换热或空间遥感领域。
Silicon carbide ceramic joint as well as preparation method and application thereof
The invention belongs to the technical field of ceramic welding, and discloses a silicon carbide ceramic joint and a preparation method and application thereof.The method comprises the steps that a to-be-welded area of pre-oxidized SiC ceramic is coated with a welding flux formed by mixing phenolic resin and a solvent, an obtained to-be-connected assembly is subjected to heat treatment in a nitrogen atmosphere at the temperature of 1550-1650 DEG C under the pressure of 0.01-0.5 MPa, and then the to-be-connected assembly is obtained; and coating the Si slurry on the outer surface of the welding part of the pre-connecting piece, and carrying out heat treatment at 1550-1700 DEG C under the pressure of 0.05-1 MPa to obtain the silicon carbide ceramic joint. The thickness of a connector of the silicon carbide ceramic connecting piece is 20-100 microns, the helium leakage rate of the connector is 5.0 * 10 <-12 >-1.0 * 10 <-9 > Pa.m < 3 >/s, the shear strength of the connector at room temperature is 40-80 MPa, the shear strength of the connector at the nitrogen atmosphere of 1200 DEG C is 50-100 MPa, and the silicon carbide ceramic connecting piece is applied to the field of high-temperature heat exchange or space remote sensing.
本发明属于陶瓷焊接技术领域，公开了一种碳化硅陶瓷接头及其制备方法和应用，该方法将酚醛树脂与溶剂混合的焊剂涂敷于预氧化的SiC陶瓷的待焊接区域，将得到待连接组件在0.01～0.5MPa的压力下，在氮气气氛中1550～1650℃热处理，将Si浆涂于预连接件的焊接部位外表面，在0.05～1MPa的压力下1550～1700℃热处理，得到碳化硅陶瓷接头。该碳化硅陶瓷连接件的接头厚度为20～100μm，接头氦漏率为5.0×10‑12～1.0×10‑9Pa·m3/s，接头在室温下的剪切强度为40～80MPa，在1200℃氮气气氛下的剪切强度为50～100MPa，应用在高温换热或空间遥感领域。
Silicon carbide ceramic joint as well as preparation method and application thereof
一种碳化硅陶瓷接头及其制备方法和应用
WU JINYUAN (author) / ZHAN CHUANGTIAN (author) / GUO WEIMING (author) / HE SHENGJIN (author) / LIN HUATAI (author)
2023-11-28
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Silicon carbide ceramic as well as preparation method and application thereof
| European Patent Office | 2024
Silicon carbide ceramic as well as preparation method and application thereof
| European Patent Office | 2024
Silicon carbide ceramic as well as preparation method and application thereof
| European Patent Office | 2024
Silicon carbide ceramic microsphere as well as preparation method and application thereof
| European Patent Office | 2024
Silicon carbide foamed ceramic as well as preparation method and application thereof
| European Patent Office | 2024