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Preparation method of calcium-doped bismuth ferrite film system material
The invention discloses a preparation method of a calcium-doped bismuth ferrite (Bi1-xCaxFeO3) thin film system material. The method specifically comprises the following steps of solution preparation, gel and powder preparation, target material preparation, bottom electrode target material preparation, target material and substrate treatment, thin film growth environment regulation and control and thin film preparation. According to the invention, the solvent gel method is adopted to ensure the mixing of the components at the molecular level, the ceramic target material is high in density, and the epitaxially grown film is high in phase purity; according to the invention, oxygen vacancies with different concentrations are introduced by adjusting the calcium doping ratio, the conductivity of the film is enhanced, and the film has great potential application value; according to the invention, the La0. 5Sr0. 5MnO3 electrode material which has a small lattice constant difference with Bi1-xCaxFeO3 is introduced as the bottom electrode, so that the epitaxial growth film has an atomic-level flat step, epitaxial growth is facilitated, the defect density is reduced, the crystal quality of the film is good, the performance of a device is improved, and the service life of the device is prolonged.
本发明公开一种钙掺杂铁酸铋（Bi1‑xCaxFeO3）薄膜体系材料的制备方法，该方法具体包括以下步骤：溶液制备，凝胶及粉体制备，靶材制备，底电极靶材制备，靶材和衬底处理，薄膜生长环境调控，薄膜制备；本发明采用溶剂凝胶法保证了各组分在分子级别的混合，陶瓷靶材致密度高，外延生长的薄膜成相纯度高；本发明通过调节钙掺杂比例引入不同浓度的氧空位，增强了薄膜的导电性，具有极大的潜在应用价值；本发明通过引入与Bi1‑xCaxFeO3晶格常数差别小的La0.5Sr0.5MnO3电极材料作为底电极，使得外延生长的薄膜具有原子级别的平整台阶，有利于外延生长，降低缺陷密度、薄膜结晶质量好，提升器件的性能和寿命。
Preparation method of calcium-doped bismuth ferrite film system material
The invention discloses a preparation method of a calcium-doped bismuth ferrite (Bi1-xCaxFeO3) thin film system material. The method specifically comprises the following steps of solution preparation, gel and powder preparation, target material preparation, bottom electrode target material preparation, target material and substrate treatment, thin film growth environment regulation and control and thin film preparation. According to the invention, the solvent gel method is adopted to ensure the mixing of the components at the molecular level, the ceramic target material is high in density, and the epitaxially grown film is high in phase purity; according to the invention, oxygen vacancies with different concentrations are introduced by adjusting the calcium doping ratio, the conductivity of the film is enhanced, and the film has great potential application value; according to the invention, the La0. 5Sr0. 5MnO3 electrode material which has a small lattice constant difference with Bi1-xCaxFeO3 is introduced as the bottom electrode, so that the epitaxial growth film has an atomic-level flat step, epitaxial growth is facilitated, the defect density is reduced, the crystal quality of the film is good, the performance of a device is improved, and the service life of the device is prolonged.
本发明公开一种钙掺杂铁酸铋（Bi1‑xCaxFeO3）薄膜体系材料的制备方法，该方法具体包括以下步骤：溶液制备，凝胶及粉体制备，靶材制备，底电极靶材制备，靶材和衬底处理，薄膜生长环境调控，薄膜制备；本发明采用溶剂凝胶法保证了各组分在分子级别的混合，陶瓷靶材致密度高，外延生长的薄膜成相纯度高；本发明通过调节钙掺杂比例引入不同浓度的氧空位，增强了薄膜的导电性，具有极大的潜在应用价值；本发明通过引入与Bi1‑xCaxFeO3晶格常数差别小的La0.5Sr0.5MnO3电极材料作为底电极，使得外延生长的薄膜具有原子级别的平整台阶，有利于外延生长，降低缺陷密度、薄膜结晶质量好，提升器件的性能和寿命。
Preparation method of calcium-doped bismuth ferrite film system material
一种钙掺杂铁酸铋薄膜体系材料的制备方法
MA JI (author) / ZHANG TONG (author) / YANG SHENG'AN (author) / LI JUNHONG (author) / HUANG XIN (author)
2023-12-01
Patent
Electronic Resource
Chinese
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