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High-purity indium cerium tantalum holmium oxide target material and preparation method thereof
The invention relates to the technical field of target production, and discloses a preparation method of a high-purity indium cerium tantalum holmium oxide target, which comprises the following steps: step 1, weighing soluble metal salts of indium, cerium, tantalum and holmium according to the molar ratio of In: Ce: Ta: Ho = (90-94): (0.8-1.2): (4-6): (1.2-2.8), and dissolving in deionized water; 2, adding a precipitant urea into the mixture obtained in the step 1, and mixing; 3, placing the mixture in the step 2 in a closed container, heating at 190-200 DEG C, and separating after heating to obtain precursor powder; and 4, calcining the precursor powder, and carrying out molding operation to obtain the indium cerium tantalum holmium oxide target material. The content of indium in the target material is relatively low, high conductivity can be controlled by combining cerium, tantalum and holmium, and meanwhile, the purity of the target material can be effectively kept through a wet precipitation process, which is an important factor for improving the conductivity. Meanwhile, the invention further discloses the target material.
本申请涉及靶材生产技术领域，公开了一种高纯度氧化铟铈钽钬靶材的制备方法，包括如下步骤：步骤1：按照摩尔比In:Ce:Ta:Ho＝90～94:0.8～1.2:4～6:1.2～2.8的比例称取铟、铈、钽、钬的可溶性金属盐，溶解于去离子水中；步骤2：在步骤1的混合物中加入沉淀剂尿素并混合；步骤3：将步骤2的混合物置于密闭容器中在190～200℃的条件下加热，加热结束后分离得到前驱体粉末；步骤4：将前驱体粉末进行煅烧、成型操作后得到氧化铟铈钽钬靶材。该靶材中铟的含量相对较低，结合铈钽钬的使用，有利于控制较高的电导率，同时通过湿法沉淀工艺可以有效保持靶材的纯度，这也是电导率提高的一个重要因素。同上，本发明还公开了该靶材。
High-purity indium cerium tantalum holmium oxide target material and preparation method thereof
The invention relates to the technical field of target production, and discloses a preparation method of a high-purity indium cerium tantalum holmium oxide target, which comprises the following steps: step 1, weighing soluble metal salts of indium, cerium, tantalum and holmium according to the molar ratio of In: Ce: Ta: Ho = (90-94): (0.8-1.2): (4-6): (1.2-2.8), and dissolving in deionized water; 2, adding a precipitant urea into the mixture obtained in the step 1, and mixing; 3, placing the mixture in the step 2 in a closed container, heating at 190-200 DEG C, and separating after heating to obtain precursor powder; and 4, calcining the precursor powder, and carrying out molding operation to obtain the indium cerium tantalum holmium oxide target material. The content of indium in the target material is relatively low, high conductivity can be controlled by combining cerium, tantalum and holmium, and meanwhile, the purity of the target material can be effectively kept through a wet precipitation process, which is an important factor for improving the conductivity. Meanwhile, the invention further discloses the target material.
本申请涉及靶材生产技术领域，公开了一种高纯度氧化铟铈钽钬靶材的制备方法，包括如下步骤：步骤1：按照摩尔比In:Ce:Ta:Ho＝90～94:0.8～1.2:4～6:1.2～2.8的比例称取铟、铈、钽、钬的可溶性金属盐，溶解于去离子水中；步骤2：在步骤1的混合物中加入沉淀剂尿素并混合；步骤3：将步骤2的混合物置于密闭容器中在190～200℃的条件下加热，加热结束后分离得到前驱体粉末；步骤4：将前驱体粉末进行煅烧、成型操作后得到氧化铟铈钽钬靶材。该靶材中铟的含量相对较低，结合铈钽钬的使用，有利于控制较高的电导率，同时通过湿法沉淀工艺可以有效保持靶材的纯度，这也是电导率提高的一个重要因素。同上，本发明还公开了该靶材。
High-purity indium cerium tantalum holmium oxide target material and preparation method thereof
一种高纯度氧化铟铈钽钬靶材及其制备方法
LI KAIJIE (author) / LUO SISHI (author) / SHAO XUELIANG (author) / GU DESHENG (author) / ZHANG XINGYU (author)
2023-12-12
Patent
Electronic Resource
Chinese
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