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Indium titanium tantalum cerium oxide target material and preparation method and application thereof
The invention belongs to the field of solar targets, and discloses a preparation method of an indium titanium tantalum cerium oxide target, which comprises the following steps: mixing a metal oxide, an auxiliary agent and deionized water, pulping, ball-milling and sieving to obtain powder I; drying, crushing and sieving the obtained powder I to obtain powder II; carrying out mould pressing and cold isostatic pressing on the obtained powder II to obtain a target precursor; finally, the obtained target material precursor is placed in a sintering furnace to be sintered and cooled to the room temperature, and the indium titanium tantalum cerium oxide target material is obtained.In addition, the indium titanium tantalum cerium oxide target material is further disclosed, the indium titanium tantalum cerium oxide target material is obtained by doping tin elements with similar ion radiuses into the indium cerium tantalum titanium oxide target material and adopting a two-step sintering process, and the indium titanium tantalum cerium oxide target material is obtained. The density and the electron mobility of the target material are improved.
本发明属于太阳能靶材领域，公开了一种氧化铟钛钽铈靶材的制备方法，该方法先将金属氧化物、助剂、去离子水混合进行制浆球磨，过筛，得到粉体一；再将得到的粉体一烘干，破碎过筛，得到粉体二；而后将得到的粉体二进行模压，冷等静压成型，得到靶材前驱体；最后将得到的靶材前驱体置于烧结炉中，烧结，降至室温，得到氧化铟钛钽铈靶材，此外，还公开了一种氧化铟钛钽铈靶材，通过对氧化铟铈钽钛靶材掺杂离子半径相近的锡元素，并且采用两步法烧结工艺，实现了靶材的致密度以及电子迁移率的提升和改善。
Indium titanium tantalum cerium oxide target material and preparation method and application thereof
The invention belongs to the field of solar targets, and discloses a preparation method of an indium titanium tantalum cerium oxide target, which comprises the following steps: mixing a metal oxide, an auxiliary agent and deionized water, pulping, ball-milling and sieving to obtain powder I; drying, crushing and sieving the obtained powder I to obtain powder II; carrying out mould pressing and cold isostatic pressing on the obtained powder II to obtain a target precursor; finally, the obtained target material precursor is placed in a sintering furnace to be sintered and cooled to the room temperature, and the indium titanium tantalum cerium oxide target material is obtained.In addition, the indium titanium tantalum cerium oxide target material is further disclosed, the indium titanium tantalum cerium oxide target material is obtained by doping tin elements with similar ion radiuses into the indium cerium tantalum titanium oxide target material and adopting a two-step sintering process, and the indium titanium tantalum cerium oxide target material is obtained. The density and the electron mobility of the target material are improved.
本发明属于太阳能靶材领域，公开了一种氧化铟钛钽铈靶材的制备方法，该方法先将金属氧化物、助剂、去离子水混合进行制浆球磨，过筛，得到粉体一；再将得到的粉体一烘干，破碎过筛，得到粉体二；而后将得到的粉体二进行模压，冷等静压成型，得到靶材前驱体；最后将得到的靶材前驱体置于烧结炉中，烧结，降至室温，得到氧化铟钛钽铈靶材，此外，还公开了一种氧化铟钛钽铈靶材，通过对氧化铟铈钽钛靶材掺杂离子半径相近的锡元素，并且采用两步法烧结工艺，实现了靶材的致密度以及电子迁移率的提升和改善。
Indium titanium tantalum cerium oxide target material and preparation method and application thereof
一种氧化铟钛钽铈靶材及其制备方法和应用
ZHANG GAOXIANG (author) / ZHANG LIHAN (author) / WANG QIFENG (author) / LI KAIJIE (author) / XIONG HAO (author)
2024-11-15
Patent
Electronic Resource
Chinese
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