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Copper-ceramic bonded body and insulated circuit board
In this copper-ceramic bonded body, copper members (12, 13) are bonded to one surface and the other surface of a ceramic member (11), respectively, and active metal nitride layers (21, 31) are formed on the ceramic member (11) side of the copper members (12, 13). The area ratios A1 and A2 of an active metal compound containing Si and an active metal in regions (E1) and (E2) 10 [mu] m from the active metal nitride layers (21) and (31) toward the copper members (12) and (13) are 10% or less, and the ratio A1/A2 of the area ratio A1 of the active metal compound on one surface side to the area ratio A2 of the active metal compound on the other surface side is within the range of 0.7-1.4.
在本发明的铜‑陶瓷接合体中,在陶瓷部件(11)的一面和另一面分别接合有铜部件(12)、(13),在铜部件(12)、(13)中的陶瓷部件(11)侧形成有活性金属氮化物层(21)、(31),含有Si和活性金属的活性金属化合物在从活性金属氮化物层(21)、(31)起朝向铜部件(12)、(13)侧10μm的区域(E1)、(E2)中的面积率A1、A2为10%以下,一面侧的所述活性金属化合物的面积率A1与所述另一面侧的所述活性金属化合物的面积率A2之比A1/A2在0.7以上且1.4以下的范围内。
Copper-ceramic bonded body and insulated circuit board
In this copper-ceramic bonded body, copper members (12, 13) are bonded to one surface and the other surface of a ceramic member (11), respectively, and active metal nitride layers (21, 31) are formed on the ceramic member (11) side of the copper members (12, 13). The area ratios A1 and A2 of an active metal compound containing Si and an active metal in regions (E1) and (E2) 10 [mu] m from the active metal nitride layers (21) and (31) toward the copper members (12) and (13) are 10% or less, and the ratio A1/A2 of the area ratio A1 of the active metal compound on one surface side to the area ratio A2 of the active metal compound on the other surface side is within the range of 0.7-1.4.
在本发明的铜‑陶瓷接合体中,在陶瓷部件(11)的一面和另一面分别接合有铜部件(12)、(13),在铜部件(12)、(13)中的陶瓷部件(11)侧形成有活性金属氮化物层(21)、(31),含有Si和活性金属的活性金属化合物在从活性金属氮化物层(21)、(31)起朝向铜部件(12)、(13)侧10μm的区域(E1)、(E2)中的面积率A1、A2为10%以下,一面侧的所述活性金属化合物的面积率A1与所述另一面侧的所述活性金属化合物的面积率A2之比A1/A2在0.7以上且1.4以下的范围内。
Copper-ceramic bonded body and insulated circuit board
铜-陶瓷接合体及绝缘电路基板
TERASAKI NOBUYUKI (author)
2023-12-12
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME