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Preparation method of ceramic copper-clad substrate
The invention belongs to the field of semiconductor materials, and discloses a preparation method of a ceramic copper-clad substrate. The method comprises the following steps: firstly, carrying out sheathing treatment on silicon nitride ceramic and an oxygen-free copper sheet to play a role in isolating oxygen, putting a sheathing sample into a discharge plasma sintering furnace, vacuumizing to 1.0 * 10 <-3 >, and heating to 700-750 DEG C to obtain a sealed sheathing sample of which the interior is in a highly vacuum state; and finally, putting the silicon nitride ceramic substrate into a hot isostatic pressing furnace, and applying uniform pressure of 150-200Mpa and 700-750 DEG C to ensure that the internal structure of the silicon nitride ceramic substrate is uniform and tightly combined. The ceramic and the copper sheet are mutually diffused to form a transition layer with the thickness of about 2 microns, the silicon nitride ceramic and the copper are tightly combined, and the voidage is low.
本发明于半导体材料领域，公开了一种陶瓷覆铜基板的制备方法。对氮化硅陶瓷和无氧铜片首先进行包套处理，起到隔绝氧气的作用，将包套样品放入放电等离子烧结炉抽真空至1.0x10‑3并加热到700‑750℃，得到密封且内部为高度真空状态的包套样品；最后放入热等静压炉中施加150‑200Mpa的均匀压力及700‑750℃，保证了氮化硅陶瓷基板内部组织均匀且结合紧密。陶瓷与铜片之间互相扩散形成约2μm厚的过渡层，氮化硅陶瓷与铜结合紧密、空洞率较低。
Preparation method of ceramic copper-clad substrate
The invention belongs to the field of semiconductor materials, and discloses a preparation method of a ceramic copper-clad substrate. The method comprises the following steps: firstly, carrying out sheathing treatment on silicon nitride ceramic and an oxygen-free copper sheet to play a role in isolating oxygen, putting a sheathing sample into a discharge plasma sintering furnace, vacuumizing to 1.0 * 10 <-3 >, and heating to 700-750 DEG C to obtain a sealed sheathing sample of which the interior is in a highly vacuum state; and finally, putting the silicon nitride ceramic substrate into a hot isostatic pressing furnace, and applying uniform pressure of 150-200Mpa and 700-750 DEG C to ensure that the internal structure of the silicon nitride ceramic substrate is uniform and tightly combined. The ceramic and the copper sheet are mutually diffused to form a transition layer with the thickness of about 2 microns, the silicon nitride ceramic and the copper are tightly combined, and the voidage is low.
本发明于半导体材料领域，公开了一种陶瓷覆铜基板的制备方法。对氮化硅陶瓷和无氧铜片首先进行包套处理，起到隔绝氧气的作用，将包套样品放入放电等离子烧结炉抽真空至1.0x10‑3并加热到700‑750℃，得到密封且内部为高度真空状态的包套样品；最后放入热等静压炉中施加150‑200Mpa的均匀压力及700‑750℃，保证了氮化硅陶瓷基板内部组织均匀且结合紧密。陶瓷与铜片之间互相扩散形成约2μm厚的过渡层，氮化硅陶瓷与铜结合紧密、空洞率较低。
Preparation method of ceramic copper-clad substrate
一种陶瓷覆铜基板的制备方法
WANG XING'AN (author) / LUO LING (author) / HAN SHUANG (author) / SUN XUDONG (author) / LYU HUI (author) / REN PEI (author) / BAI XIAOLONG (author) / SUN JING (author) / LI YANZHAO (author) / HUI YU (author)
2023-12-22
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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Ceramic copper-clad substrate and preparation method thereof
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