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Alumina ceramic target as well as preparation method and application thereof
The invention relates to an aluminum oxide ceramic target material and a preparation method and application thereof, the preparation method comprises the following steps: (1) carrying out cold isostatic pressing treatment on aluminum oxide powder with the purity of more than or equal to 4N and the average particle size of 0.1-1 [mu] m, and carrying out numerical control processing treatment on an obtained plain blank to obtain an aluminum oxide blank; and (2) sequentially carrying out sheath welding treatment, degassing treatment and hot isostatic pressing treatment on the aluminum oxide blank obtained in the step (1), and removing the sheath to obtain the aluminum oxide ceramic target material. According to the preparation method, the aluminum oxide powder with relatively high purity and fineness is taken as the raw material, and the process parameters of the cold isostatic pressing treatment and the hot isostatic pressing treatment are controlled, so that the prepared aluminum oxide ceramic target material has relatively high purity and density and can meet the high-performance requirement of the target material for a semiconductor.
本发明涉及一种氧化铝陶瓷靶材及其制备方法与应用，所述制备方法包括如下步骤：(1)将纯度≥4N、平均粒径为0.1‑1μm的氧化铝粉进行冷等静压处理，所得素坯料经数控加工处理，得到氧化铝坯料；(2)步骤(1)所得氧化铝坯料依次经包套焊接处理、脱气处理以及热等静压处理，去除包套后得到所述氧化铝陶瓷靶材。本发明以纯度与细度较高的氧化铝粉为原料，控制冷等静压处理及热等静压处理的工艺参数，使得制备得到的氧化铝陶瓷靶材具有较高的纯度与致密度，能够满足半导体用靶材的高性能要求。
Alumina ceramic target as well as preparation method and application thereof
The invention relates to an aluminum oxide ceramic target material and a preparation method and application thereof, the preparation method comprises the following steps: (1) carrying out cold isostatic pressing treatment on aluminum oxide powder with the purity of more than or equal to 4N and the average particle size of 0.1-1 [mu] m, and carrying out numerical control processing treatment on an obtained plain blank to obtain an aluminum oxide blank; and (2) sequentially carrying out sheath welding treatment, degassing treatment and hot isostatic pressing treatment on the aluminum oxide blank obtained in the step (1), and removing the sheath to obtain the aluminum oxide ceramic target material. According to the preparation method, the aluminum oxide powder with relatively high purity and fineness is taken as the raw material, and the process parameters of the cold isostatic pressing treatment and the hot isostatic pressing treatment are controlled, so that the prepared aluminum oxide ceramic target material has relatively high purity and density and can meet the high-performance requirement of the target material for a semiconductor.
本发明涉及一种氧化铝陶瓷靶材及其制备方法与应用，所述制备方法包括如下步骤：(1)将纯度≥4N、平均粒径为0.1‑1μm的氧化铝粉进行冷等静压处理，所得素坯料经数控加工处理，得到氧化铝坯料；(2)步骤(1)所得氧化铝坯料依次经包套焊接处理、脱气处理以及热等静压处理，去除包套后得到所述氧化铝陶瓷靶材。本发明以纯度与细度较高的氧化铝粉为原料，控制冷等静压处理及热等静压处理的工艺参数，使得制备得到的氧化铝陶瓷靶材具有较高的纯度与致密度，能够满足半导体用靶材的高性能要求。
Alumina ceramic target as well as preparation method and application thereof
一种氧化铝陶瓷靶材及其制备方法与应用
YAO LIJUN (author) / WANG KE (author) / WANG JUBAO (author) / ZHOU MIN (author)
2024-01-26
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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