A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Method for preparing BN composite ceramic by in-situ growth of SiC nanowires through chemical vapor deposition technology
The invention relates to a method for preparing BN (boron nitride) composite ceramic by in-situ growth of SiC nanowires through a chemical vapor deposition technology, which realizes uniform compounding of the SiC nanowires and BN powder by using a method for in-situ growth of the SiC nanowires. The problem of low composite ceramic performance caused by non-uniform dispersion of the nanowires in mixed powder prepared by a conventional mechanical mixing mode is effectively avoided, and the in-situ growth of the uniformly dispersed SiC nanowires gives full play to the strengthening and toughening advantage of the SiC nanowires on the composite material; the breaking energy of the material can be fully absorbed by the pulling-out, crack deflection and the like of the uniformly dispersed SiC nanowires, so that the mechanical property of the BN composite ceramic is improved to the maximum extent; meanwhile, the uniformly dispersed SiC nanowires introduced in the invention have good high-temperature performance, and the prepared BN composite ceramic can effectively resist deformation and cracking under the action of high temperature and pressure, has high reliability and long service life, and is very beneficial to application of the BN composite ceramic in the high-temperature field.
本发明涉及一种化学气相沉积技术原位生长SiC纳米线制备BN复合陶瓷的方法，本发明利用原位生长SiC纳米线的方法实现了SiC纳米线和BN粉体的均匀复合，有效避免了常规的机械混合方式制备混合粉体中纳米线分散不均匀导致复合陶瓷性能不高的问题，原位生长均匀分散的SiC纳米线充分发挥了SiC纳米线对复合材料强韧化的优势，均匀分散的SiC纳米线的拔出、裂纹偏转等可以充分的吸收材料的破坏能量，最大程度地提升了BN复合陶瓷力学性能；同时本发明引入的均匀分散的SiC纳米线具有良好的高温性能，制备的BN复合陶瓷可有效抵御高温、压力作用下的变形、开裂，具有高可靠性和服役寿命，十分有利于BN复合陶瓷在高温领域的应用。
Method for preparing BN composite ceramic by in-situ growth of SiC nanowires through chemical vapor deposition technology
The invention relates to a method for preparing BN (boron nitride) composite ceramic by in-situ growth of SiC nanowires through a chemical vapor deposition technology, which realizes uniform compounding of the SiC nanowires and BN powder by using a method for in-situ growth of the SiC nanowires. The problem of low composite ceramic performance caused by non-uniform dispersion of the nanowires in mixed powder prepared by a conventional mechanical mixing mode is effectively avoided, and the in-situ growth of the uniformly dispersed SiC nanowires gives full play to the strengthening and toughening advantage of the SiC nanowires on the composite material; the breaking energy of the material can be fully absorbed by the pulling-out, crack deflection and the like of the uniformly dispersed SiC nanowires, so that the mechanical property of the BN composite ceramic is improved to the maximum extent; meanwhile, the uniformly dispersed SiC nanowires introduced in the invention have good high-temperature performance, and the prepared BN composite ceramic can effectively resist deformation and cracking under the action of high temperature and pressure, has high reliability and long service life, and is very beneficial to application of the BN composite ceramic in the high-temperature field.
本发明涉及一种化学气相沉积技术原位生长SiC纳米线制备BN复合陶瓷的方法，本发明利用原位生长SiC纳米线的方法实现了SiC纳米线和BN粉体的均匀复合，有效避免了常规的机械混合方式制备混合粉体中纳米线分散不均匀导致复合陶瓷性能不高的问题，原位生长均匀分散的SiC纳米线充分发挥了SiC纳米线对复合材料强韧化的优势，均匀分散的SiC纳米线的拔出、裂纹偏转等可以充分的吸收材料的破坏能量，最大程度地提升了BN复合陶瓷力学性能；同时本发明引入的均匀分散的SiC纳米线具有良好的高温性能，制备的BN复合陶瓷可有效抵御高温、压力作用下的变形、开裂，具有高可靠性和服役寿命，十分有利于BN复合陶瓷在高温领域的应用。
Method for preparing BN composite ceramic by in-situ growth of SiC nanowires through chemical vapor deposition technology
一种化学气相沉积技术原位生长SiC纳米线制备BN复合陶瓷的方法
WANG LIANJUN (author) / WU XIANGMIN (author) / GU SHIJIA (author) / FU BINGJIE (author) / WANG JUNZHUO (author) / JIANG WAN (author)
2024-02-02
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Chemical vapor deposition method for rapidly preparing ceramic-based composite material
| European Patent Office | 2024
| European Patent Office | 2020
| European Patent Office | 2024
Synthesis of b-Ga2O3 nanowires through microwave plasma chemical vapor deposition
| British Library Online Contents | 2006