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Manganese hafnium tungstate ceramic material based on vacancy and chemical disorder regulation and control as well as preparation method and application of manganese hafnium tungstate ceramic material
The invention relates to the technical field of magnetoelectric ceramic materials, in particular to a manganese-hafnium tungstate ceramic material based on vacancy and chemical disorder regulation and control and a preparation method and application of the manganese-hafnium tungstate ceramic material. The chemical formula of the material is Mn1-xHfxWO4, and the doping amount of hafnium is more than 0 and less than or equal to 0.20; in the hafnium manganese tungstate ceramic material Mn < 1-x > Hf < x > WO < 4 >, Hf < 4 + > is subjected to Mn < 2 + > substitution to introduce vacancy defects and chemical disorder so as to regulate and control the magnetoelectric properties of the hafnium manganese tungstate ceramic; the Mn1-xHfxWO4 magnetoelectric ceramic material prepared by the invention has a single-phase structure, is excellent in dielectric property, obviously improved in magnetic transition temperature, expanded in ferroelectric polarization temperature range, obvious in magnetoelectric and dielectric characteristics and very excellent in characteristics.
本发明涉及磁电陶瓷材料技术领域，具体涉及一种基于空位与化学无序调控的钨酸锰铪陶瓷材料及其制备方法和应用；所述材料其化学式为：Mn1‑xHfxWO4，其中，铪掺杂量的范围为：0＜x≤0.20；在钨酸锰铪陶瓷材料Mn1‑xHfxWO4中，所述Hf4+进行Mn2+替代引入空位缺陷与化学无序，以调控钨酸锰铪陶瓷的磁电性能；本发明制备得到的Mn1‑xHfxWO4磁电陶瓷材料具有单相结构，介电性能优良，磁转变温度显著提高，铁电极化温区范围扩大，以及磁介电特征明显，具有非常优异的特性。
Manganese hafnium tungstate ceramic material based on vacancy and chemical disorder regulation and control as well as preparation method and application of manganese hafnium tungstate ceramic material
The invention relates to the technical field of magnetoelectric ceramic materials, in particular to a manganese-hafnium tungstate ceramic material based on vacancy and chemical disorder regulation and control and a preparation method and application of the manganese-hafnium tungstate ceramic material. The chemical formula of the material is Mn1-xHfxWO4, and the doping amount of hafnium is more than 0 and less than or equal to 0.20; in the hafnium manganese tungstate ceramic material Mn < 1-x > Hf < x > WO < 4 >, Hf < 4 + > is subjected to Mn < 2 + > substitution to introduce vacancy defects and chemical disorder so as to regulate and control the magnetoelectric properties of the hafnium manganese tungstate ceramic; the Mn1-xHfxWO4 magnetoelectric ceramic material prepared by the invention has a single-phase structure, is excellent in dielectric property, obviously improved in magnetic transition temperature, expanded in ferroelectric polarization temperature range, obvious in magnetoelectric and dielectric characteristics and very excellent in characteristics.
本发明涉及磁电陶瓷材料技术领域，具体涉及一种基于空位与化学无序调控的钨酸锰铪陶瓷材料及其制备方法和应用；所述材料其化学式为：Mn1‑xHfxWO4，其中，铪掺杂量的范围为：0＜x≤0.20；在钨酸锰铪陶瓷材料Mn1‑xHfxWO4中，所述Hf4+进行Mn2+替代引入空位缺陷与化学无序，以调控钨酸锰铪陶瓷的磁电性能；本发明制备得到的Mn1‑xHfxWO4磁电陶瓷材料具有单相结构，介电性能优良，磁转变温度显著提高，铁电极化温区范围扩大，以及磁介电特征明显，具有非常优异的特性。
Manganese hafnium tungstate ceramic material based on vacancy and chemical disorder regulation and control as well as preparation method and application of manganese hafnium tungstate ceramic material
一种基于空位与化学无序调控的钨酸锰铪陶瓷材料及其制备方法和应用
DAI HAIYANG (author) / LI TAO (author) / YAN FUFENG (author) / GUO JINGHUI (author) / XIE LUOGANG (author) / SHEN QINLONG (author) / CHEN JING (author) / CHEN ZHENPING (author)
2024-03-01
Patent
Electronic Resource
Chinese
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