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Low-temperature sintering microwave dielectric ceramic with low dielectric constant and preparation method thereof
The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a low-dielectric-constant low-temperature sintering microwave dielectric ceramic material and a preparation method thereof. The base material of the low-temperature sintered microwave dielectric ceramic is Er3Ga5O12, the mass of the added glass sintering aid is 5-25% of that of the ceramic base material, the low-temperature sintered microwave dielectric ceramic is prepared by a microwave sintering method, the sintering temperature is 850-950 DEG C, the dielectric constant is 6-10, and the Q * f value can reach 13450GHz at most. The Er3Ga5O12 ceramic base material is obtained by presintering at 1150 DEG C, and the glass sintering aid is prepared by a melting-water quenching method. The low-temperature sintering microwave dielectric ceramic material provided by the invention can meet LTCC (Low Temperature Co-Fired Ceramic) process requirements.
本发明属于电子陶瓷及其制造领域，涉及一种低介电常数低温烧结微波介电陶瓷材料及其制备方法。本发明提供的低温烧结微波介质陶瓷的基料为Er3Ga5O12，添加玻璃助烧剂质量为陶瓷基料的5％～25％，低温烧结微波介质陶瓷由微波烧结法制得，烧结温度为850～950℃，介电常数在6～10之间，Q×f值最高可达到13450GHz。所述Er3Ga5O12陶瓷基料在1150℃预烧得到，玻璃助烧剂通过熔融‑水淬法制得。本发明提供的低温烧结微波介质陶瓷材料，能够满足LTCC工艺需求。
Low-temperature sintering microwave dielectric ceramic with low dielectric constant and preparation method thereof
The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a low-dielectric-constant low-temperature sintering microwave dielectric ceramic material and a preparation method thereof. The base material of the low-temperature sintered microwave dielectric ceramic is Er3Ga5O12, the mass of the added glass sintering aid is 5-25% of that of the ceramic base material, the low-temperature sintered microwave dielectric ceramic is prepared by a microwave sintering method, the sintering temperature is 850-950 DEG C, the dielectric constant is 6-10, and the Q * f value can reach 13450GHz at most. The Er3Ga5O12 ceramic base material is obtained by presintering at 1150 DEG C, and the glass sintering aid is prepared by a melting-water quenching method. The low-temperature sintering microwave dielectric ceramic material provided by the invention can meet LTCC (Low Temperature Co-Fired Ceramic) process requirements.
本发明属于电子陶瓷及其制造领域，涉及一种低介电常数低温烧结微波介电陶瓷材料及其制备方法。本发明提供的低温烧结微波介质陶瓷的基料为Er3Ga5O12，添加玻璃助烧剂质量为陶瓷基料的5％～25％，低温烧结微波介质陶瓷由微波烧结法制得，烧结温度为850～950℃，介电常数在6～10之间，Q×f值最高可达到13450GHz。所述Er3Ga5O12陶瓷基料在1150℃预烧得到，玻璃助烧剂通过熔融‑水淬法制得。本发明提供的低温烧结微波介质陶瓷材料，能够满足LTCC工艺需求。
Low-temperature sintering microwave dielectric ceramic with low dielectric constant and preparation method thereof
一种低介电常数低温烧结微波介质陶瓷及其制备方法
ZHANG SHU (author) / WU MENGQIANG (author)
2024-03-08
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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