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Yttrium oxide nozzle manufacturing process, dry pressing forming mold and dry pressing forming equipment
The invention discloses a production process of an yttrium oxide nozzle, which comprises the following steps: S101, yttrium oxide powder is produced by spray granulation, and the average particle size of the yttrium oxide powder is 20-100 [mu] m; s102, the yttrium oxide powder is added into a mold to be subjected to dry pressing forming to form a green body, and the dry pressing pressure is 30-80 MPa; s103, the green body is degreased and pre-sintered, and a sintered body is obtained; degreasing and presintering are carried out in an atmospheric environment, the degreasing temperature is 200-800 DEG C, the heat preservation time is 1-8 h, the presintering temperature is 1100-1300 DEG C, and the heat preservation time is 2-3 h; s104, rough machining is conducted on the sintered body, and the machining allowance of the sintered body after final sintering is reserved; s105, the sintered body obtained after rough machining is subjected to final sintering; the final sintering temperature is 1500-1750 DEG C, and the heat preservation time is 1-8 hours; s106, the nozzle is subjected to finish machining; the method can solve the problem that when the yttrium oxide nozzle in the green body stage is processed, the green body is easy to crack and damage due to low strength of the green body, and then the yield of a manufactured chip is influenced.
本发明公开了一种氧化钇喷嘴的制作工艺,包括以下步骤:S101:利用喷雾造粒制作氧化钇粉末,所述氧化钇粉末平均粒径为20‑100μm;S102:将所述氧化钇粉末加入模具中干压成型形成生坯,干压压强为30‑80MPa;S103:将所述生坯进行脱脂及预烧结,得到烧结体;脱脂与预烧结在大气环境中进行,其中,所述脱脂温度为200‑800℃,保温时间为1‑8h,预烧结温度为1100‑1300℃,保温时间为2‑3h;S104:对所述烧结体进行粗加工,保留烧结体最终烧结后的加工余量;S105:对粗加工后的烧结体进行最终烧结;最终烧结温度为1500‑1750℃,保温时间为1‑8h;S106:对所述喷嘴进行精加工;本发明可解决生坯阶段的氧化钇喷嘴进行加工时,由于生坯强度低,容易造成生坯出现裂纹、缺损,继而影响制作的芯片的良率问题。
Yttrium oxide nozzle manufacturing process, dry pressing forming mold and dry pressing forming equipment
The invention discloses a production process of an yttrium oxide nozzle, which comprises the following steps: S101, yttrium oxide powder is produced by spray granulation, and the average particle size of the yttrium oxide powder is 20-100 [mu] m; s102, the yttrium oxide powder is added into a mold to be subjected to dry pressing forming to form a green body, and the dry pressing pressure is 30-80 MPa; s103, the green body is degreased and pre-sintered, and a sintered body is obtained; degreasing and presintering are carried out in an atmospheric environment, the degreasing temperature is 200-800 DEG C, the heat preservation time is 1-8 h, the presintering temperature is 1100-1300 DEG C, and the heat preservation time is 2-3 h; s104, rough machining is conducted on the sintered body, and the machining allowance of the sintered body after final sintering is reserved; s105, the sintered body obtained after rough machining is subjected to final sintering; the final sintering temperature is 1500-1750 DEG C, and the heat preservation time is 1-8 hours; s106, the nozzle is subjected to finish machining; the method can solve the problem that when the yttrium oxide nozzle in the green body stage is processed, the green body is easy to crack and damage due to low strength of the green body, and then the yield of a manufactured chip is influenced.
本发明公开了一种氧化钇喷嘴的制作工艺,包括以下步骤:S101:利用喷雾造粒制作氧化钇粉末,所述氧化钇粉末平均粒径为20‑100μm;S102:将所述氧化钇粉末加入模具中干压成型形成生坯,干压压强为30‑80MPa;S103:将所述生坯进行脱脂及预烧结,得到烧结体;脱脂与预烧结在大气环境中进行,其中,所述脱脂温度为200‑800℃,保温时间为1‑8h,预烧结温度为1100‑1300℃,保温时间为2‑3h;S104:对所述烧结体进行粗加工,保留烧结体最终烧结后的加工余量;S105:对粗加工后的烧结体进行最终烧结;最终烧结温度为1500‑1750℃,保温时间为1‑8h;S106:对所述喷嘴进行精加工;本发明可解决生坯阶段的氧化钇喷嘴进行加工时,由于生坯强度低,容易造成生坯出现裂纹、缺损,继而影响制作的芯片的良率问题。
Yttrium oxide nozzle manufacturing process, dry pressing forming mold and dry pressing forming equipment
氧化钇喷嘴的制作工艺、干压成型模具、干压成型设备
ZHANG LIXIANG (author) / ZHAO KAI (author) / CHEN YUN (author) / WANG YANG (author)
2024-03-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
/
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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