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Three-layer-structure voltage-sensitive ceramic only containing single double Schottky grain boundary potential barrier and sol-gel preparation method and application of three-layer-structure voltage-sensitive ceramic only containing single double Schottky grain boundary potential barrier
The invention discloses a three-layer-structure voltage-sensitive ceramic only containing a single double Schottky grain boundary barrier and a sol-gel preparation method and application thereof, and belongs to the technical field of voltage-sensitive materials. A solid-phase sintering method is adopted, ZnO serves as a raw material, oxide is doped, pressing is conducted, and an oxide-doped ZnO ceramic green body is obtained; coating the middle of the ZnO ceramic green body doped with the metal oxide with a Bi element-containing sol-gel solution, and pressing to obtain a ZnO green body-Bi-rich layer-ZnO green body three-layer structure green body; the three-layer structure voltage-sensitive ceramic which is simple in structure and only contains the single double-Schottky grain boundary barrier is obtained after sintering, the three-layer structure voltage-sensitive ceramic comprises two ZnO ceramic layers and a middle bismuth-rich layer, and based on the structure, research on the structure, performance and conductive mechanism of the single double-Schottky grain boundary barrier in the ZnO voltage-sensitive ceramic has remarkable advantages; and a single ZnO crystal grain-crystal boundary-ZnO crystal grain structure formed in a conventional ZnO voltage-sensitive ceramic complex structure can be simulated, so that powerful evidence is provided for exploring internal characteristics of polycrystals.
本发明公开了一种仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷及其溶胶凝胶制备方法和应用，属于压敏材料技术领域，采用固相烧结法，以ZnO为原料，掺杂氧化物压制得到氧化物掺杂ZnO陶瓷生坯，在掺杂金属氧化物的ZnO陶瓷生坯中间涂覆含有Bi元素的溶胶凝胶溶液，压制得到ZnO生坯‑富Bi层‑ZnO生坯三层结构坯体；烧结后得到结构简单的仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷，包括两层ZnO陶瓷层和中间富铋层，基于此结构，ZnO压敏陶瓷中单个双肖特基晶界势垒的结构、性能及导电机理研究具有显著优势，可模拟常规ZnO压敏陶瓷复杂结构中形成的单个ZnO晶粒‑晶界‑ZnO晶粒结构，这为探究多晶的内部特征提供有力的证据。
Three-layer-structure voltage-sensitive ceramic only containing single double Schottky grain boundary potential barrier and sol-gel preparation method and application of three-layer-structure voltage-sensitive ceramic only containing single double Schottky grain boundary potential barrier
The invention discloses a three-layer-structure voltage-sensitive ceramic only containing a single double Schottky grain boundary barrier and a sol-gel preparation method and application thereof, and belongs to the technical field of voltage-sensitive materials. A solid-phase sintering method is adopted, ZnO serves as a raw material, oxide is doped, pressing is conducted, and an oxide-doped ZnO ceramic green body is obtained; coating the middle of the ZnO ceramic green body doped with the metal oxide with a Bi element-containing sol-gel solution, and pressing to obtain a ZnO green body-Bi-rich layer-ZnO green body three-layer structure green body; the three-layer structure voltage-sensitive ceramic which is simple in structure and only contains the single double-Schottky grain boundary barrier is obtained after sintering, the three-layer structure voltage-sensitive ceramic comprises two ZnO ceramic layers and a middle bismuth-rich layer, and based on the structure, research on the structure, performance and conductive mechanism of the single double-Schottky grain boundary barrier in the ZnO voltage-sensitive ceramic has remarkable advantages; and a single ZnO crystal grain-crystal boundary-ZnO crystal grain structure formed in a conventional ZnO voltage-sensitive ceramic complex structure can be simulated, so that powerful evidence is provided for exploring internal characteristics of polycrystals.
本发明公开了一种仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷及其溶胶凝胶制备方法和应用，属于压敏材料技术领域，采用固相烧结法，以ZnO为原料，掺杂氧化物压制得到氧化物掺杂ZnO陶瓷生坯，在掺杂金属氧化物的ZnO陶瓷生坯中间涂覆含有Bi元素的溶胶凝胶溶液，压制得到ZnO生坯‑富Bi层‑ZnO生坯三层结构坯体；烧结后得到结构简单的仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷，包括两层ZnO陶瓷层和中间富铋层，基于此结构，ZnO压敏陶瓷中单个双肖特基晶界势垒的结构、性能及导电机理研究具有显著优势，可模拟常规ZnO压敏陶瓷复杂结构中形成的单个ZnO晶粒‑晶界‑ZnO晶粒结构，这为探究多晶的内部特征提供有力的证据。
Three-layer-structure voltage-sensitive ceramic only containing single double Schottky grain boundary potential barrier and sol-gel preparation method and application of three-layer-structure voltage-sensitive ceramic only containing single double Schottky grain boundary potential barrier
一种仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷及其溶胶凝胶制备方法和应用
WANG LINXUE (author) / ZHAO NENGHUI (author) / CAO WENBIN (author)
2024-03-29
Patent
Electronic Resource
Chinese
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