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Rare earth-containing SiC substrate and SiC composite substrate
Provided is a rare earth-containing SiC substrate capable of reducing cracks and cracks during substrate processing. The rare earth-containing SiC substrate is provided with a biaxially oriented SiC layer in which the ratio CB/CRE of the B concentration CB to the rare earth element concentration CRE is from 1.0 * 10 <-2 > to 1.0 * 10 < 5 >.
本发明提供一种能够减少基板加工时的破裂和裂纹的包含稀土的SiC基板。该包含稀土的SiC基板具备B的浓度CB相对于稀土元素的浓度CRE的比CB/CRE为1.0×10‑2～1.0×105的双轴取向SiC层。
Rare earth-containing SiC substrate and SiC composite substrate
Provided is a rare earth-containing SiC substrate capable of reducing cracks and cracks during substrate processing. The rare earth-containing SiC substrate is provided with a biaxially oriented SiC layer in which the ratio CB/CRE of the B concentration CB to the rare earth element concentration CRE is from 1.0 * 10 <-2 > to 1.0 * 10 < 5 >.
本发明提供一种能够减少基板加工时的破裂和裂纹的包含稀土的SiC基板。该包含稀土的SiC基板具备B的浓度CB相对于稀土元素的浓度CRE的比CB/CRE为1.0×10‑2～1.0×105的双轴取向SiC层。
Rare earth-containing SiC substrate and SiC composite substrate
包含稀土的SiC基板和SiC复合基板
MIYAKAZE RISA ( author ) / MATSUSHIMA KIYOSHI ( author ) / YOSHIKAWA JUN ( author )
2024-04-26
Patent
Electronic Resource
Chinese
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