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Three-dimensional ferroelectric memory device
A three-dimensional (3D) ferroelectric memory device is provided. The 3D ferroelectric memory device includes a substrate, a plurality of insulating layers stacked on the substrate, a plurality of gate electrodes between the plurality of insulating layers, a plurality of gate insulating layers in contact with the plurality of gate electrodes, a plurality of intermediate electrodes in contact with the plurality of gate insulating layers, and a ferroelectric layer in contact with the plurality of intermediate electrodes and the plurality of insulating layers, and a channel layer in contact with the ferroelectric layer.
提供了一种三维(3D)铁电存储器件。3D铁电存储器件包括衬底、堆叠在衬底上的多个绝缘层、在所述多个绝缘层之间的多个栅电极、与所述多个栅电极接触的多个栅极绝缘层、与所述多个栅极绝缘层接触的多个中间电极、与所述多个中间电极和所述多个绝缘层接触的铁电层、以及与铁电层接触的沟道层。
Three-dimensional ferroelectric memory device
A three-dimensional (3D) ferroelectric memory device is provided. The 3D ferroelectric memory device includes a substrate, a plurality of insulating layers stacked on the substrate, a plurality of gate electrodes between the plurality of insulating layers, a plurality of gate insulating layers in contact with the plurality of gate electrodes, a plurality of intermediate electrodes in contact with the plurality of gate insulating layers, and a ferroelectric layer in contact with the plurality of intermediate electrodes and the plurality of insulating layers, and a channel layer in contact with the ferroelectric layer.
提供了一种三维(3D)铁电存储器件。3D铁电存储器件包括衬底、堆叠在衬底上的多个绝缘层、在所述多个绝缘层之间的多个栅电极、与所述多个栅电极接触的多个栅极绝缘层、与所述多个栅极绝缘层接触的多个中间电极、与所述多个中间电极和所述多个绝缘层接触的铁电层、以及与铁电层接触的沟道层。
Three-dimensional ferroelectric memory device
三维铁电存储器件
NAM SUNG-GEOL (author) / HEO JIN-SEONG (author) / LEE HYUN JAE (author) / CHOI DUKHYUN (author)
2024-05-21
Patent
Electronic Resource
Chinese
IPC:
H10B
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