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Silicon carbide boat and preparation method thereof
The invention relates to the technical field of photovoltaic production, in particular to a silicon carbide boat and a preparation method thereof.The silicon carbide boat is formed by taking silicon carbide as a material of a retainer, the silicon carbide has good thermal stability, the thermal expansion coefficient is small, the thermal conductivity is high, and the silicon carbide can bear stress and thermal shock at the high temperature; it can be guaranteed that the silicon carbide boat cannot generate irregular deformation in a high-temperature furnace, burrs are stable, damage to silicon wafers is avoided, and the production quality is guaranteed; and the melting point of the silicon carbide material is up to 2700 DEG C, and the temperature in the high-temperature furnace for silicon wafer processing is far lower than the melting point of silicon carbide, so that the possibility of damage to the silicon carbide boat is reduced, the service life of the silicon carbide boat is prolonged, the replacement frequency is reduced, and the production cost of the silicon wafer is effectively reduced.
本发明涉及光伏生产技术领域，具体涉及一种碳化硅舟及其制备方法，本发明通过将碳化硅作为保持架的材料，以此形成碳化硅舟，碳化硅具有良好的热稳定性，其热膨胀系数小，热导率高，能够在高温下承受应力和热冲击，可以保证碳化硅舟在高温炉内不会产生不规则的变形和毛刺稳定，避免对硅片的伤害，保证生产质量；并且碳化硅材料的熔点高达2700摄氏度，硅片加工用高温炉内的温度远低于碳化硅的熔点，减少对碳化硅舟的损坏可能性，从而提高碳化硅舟的使用周期和减少更换次数，有效的降低硅片的生产成本。
Silicon carbide boat and preparation method thereof
The invention relates to the technical field of photovoltaic production, in particular to a silicon carbide boat and a preparation method thereof.The silicon carbide boat is formed by taking silicon carbide as a material of a retainer, the silicon carbide has good thermal stability, the thermal expansion coefficient is small, the thermal conductivity is high, and the silicon carbide can bear stress and thermal shock at the high temperature; it can be guaranteed that the silicon carbide boat cannot generate irregular deformation in a high-temperature furnace, burrs are stable, damage to silicon wafers is avoided, and the production quality is guaranteed; and the melting point of the silicon carbide material is up to 2700 DEG C, and the temperature in the high-temperature furnace for silicon wafer processing is far lower than the melting point of silicon carbide, so that the possibility of damage to the silicon carbide boat is reduced, the service life of the silicon carbide boat is prolonged, the replacement frequency is reduced, and the production cost of the silicon wafer is effectively reduced.
本发明涉及光伏生产技术领域，具体涉及一种碳化硅舟及其制备方法，本发明通过将碳化硅作为保持架的材料，以此形成碳化硅舟，碳化硅具有良好的热稳定性，其热膨胀系数小，热导率高，能够在高温下承受应力和热冲击，可以保证碳化硅舟在高温炉内不会产生不规则的变形和毛刺稳定，避免对硅片的伤害，保证生产质量；并且碳化硅材料的熔点高达2700摄氏度，硅片加工用高温炉内的温度远低于碳化硅的熔点，减少对碳化硅舟的损坏可能性，从而提高碳化硅舟的使用周期和减少更换次数，有效的降低硅片的生产成本。
Silicon carbide boat and preparation method thereof
一种碳化硅舟及其制备方法
JIA XIAOWEI (author)
2024-05-31
Patent
Electronic Resource
Chinese
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
B28D
Bearbeiten von Stein oder steinähnlichen Werkstoffen
,
WORKING STONE OR STONE-LIKE MATERIALS
/
C04B
Kalk
,
LIME
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