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A platform for research: civil engineering, architecture and urbanism
Bonding techniques for composite ceramic bodies
In the joined composite ceramic body, at least one ceramic body is compositionally graded with varying concentrations between two or more ceramic materials. The compositionally graded ceramic body terminates at a docking layer consisting essentially of a single ceramic material. The compositionally graded ceramic body is joined to another ceramic body, which may also be compositionally graded or made of a single ceramic material, and the docking layer of the another ceramic body has the same composition as the docking layer of the compositionally graded ceramic body. In certain embodiments, the ceramic bodies may be bonded by diffusion bonding. In certain embodiments, the ceramic body includes a ceramic platen and a ceramic rod implemented in a wafer susceptor in a plasma processing apparatus.
在接合复合陶瓷体中，至少一个陶瓷体具有在两种或更多种陶瓷材料之间的变化浓度而按成分分级。按成分分级的陶瓷体在基本上由单一陶瓷材料构成的对接层处终止。按成分分级的陶瓷体被接合至也可以是按成分分级的或由单一陶瓷材料制成的另一陶瓷体，且该另一陶瓷体的对接层与该按成分分级的陶瓷体的对接层成分相同。在某些实施方案中，可通过扩散键合而接合陶瓷体。在某些实施方案中，陶瓷体包括实施于等离子体处理装置中的晶片基座的陶瓷台板和陶瓷杆。
Bonding techniques for composite ceramic bodies
In the joined composite ceramic body, at least one ceramic body is compositionally graded with varying concentrations between two or more ceramic materials. The compositionally graded ceramic body terminates at a docking layer consisting essentially of a single ceramic material. The compositionally graded ceramic body is joined to another ceramic body, which may also be compositionally graded or made of a single ceramic material, and the docking layer of the another ceramic body has the same composition as the docking layer of the compositionally graded ceramic body. In certain embodiments, the ceramic bodies may be bonded by diffusion bonding. In certain embodiments, the ceramic body includes a ceramic platen and a ceramic rod implemented in a wafer susceptor in a plasma processing apparatus.
在接合复合陶瓷体中，至少一个陶瓷体具有在两种或更多种陶瓷材料之间的变化浓度而按成分分级。按成分分级的陶瓷体在基本上由单一陶瓷材料构成的对接层处终止。按成分分级的陶瓷体被接合至也可以是按成分分级的或由单一陶瓷材料制成的另一陶瓷体，且该另一陶瓷体的对接层与该按成分分级的陶瓷体的对接层成分相同。在某些实施方案中，可通过扩散键合而接合陶瓷体。在某些实施方案中，陶瓷体包括实施于等离子体处理装置中的晶片基座的陶瓷台板和陶瓷杆。
Bonding techniques for composite ceramic bodies
用于复合陶瓷体的接合技术
LEESER KARL FREDERICK (author)
2024-06-11
Patent
Electronic Resource
Chinese