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Thorium oxide doped material and preparation method and application thereof
The invention relates to a thorium oxide doped material as well as a preparation method and application thereof. Specifically, the invention relates to a thorium oxide doped material as shown in a formula Th1-xMxO2-x/2, and M is Sc or Y; 0.005 < = x < = 0.15. The invention further relates to a preparation method of the thorium oxide doped material, application of the thorium oxide doped material to preparation of a high-density ThO2 ceramic material, the high-density ThO2 ceramic material prepared from the thorium oxide doped material and a preparation method of the high-density ThO2 ceramic material. The ThO2 ceramic with higher density can be prepared according to the thorium oxide doped material disclosed by the invention. Besides, the high-density ThO2 ceramic can be obtained at a relatively low sintering temperature and/or without cold isostatic pressing, so that the preparation difficulty of the high-density ThO2 ceramic is reduced, and the complexity and implementation difficulty of sintering equipment are reduced.
本发明涉及掺杂氧化钍材料及其制备方法和用途。具体而言，本发明涉及式Th1‑xMxO2‑x/2所示的掺杂氧化钍材料，其中M为Sc或Y；0.005≤x≤0.15。本发明还涉及所述掺杂氧化钍材料的制备方法和用于制备高密度ThO2陶瓷材料的用途，由所述掺杂氧化钍材料制备的高密度ThO2陶瓷材料及其制备方法。根据本发明的掺杂氧化钍材料可以制备出具有更高密度的ThO2陶瓷。此外，本发明可以在较低的烧结温度下和/或不采用冷等静压就可以得到高密度的ThO2陶瓷，从而降低了高密度ThO2陶瓷的制备难度，降低了烧结设备的复杂性和实现难度。
Thorium oxide doped material and preparation method and application thereof
The invention relates to a thorium oxide doped material as well as a preparation method and application thereof. Specifically, the invention relates to a thorium oxide doped material as shown in a formula Th1-xMxO2-x/2, and M is Sc or Y; 0.005 < = x < = 0.15. The invention further relates to a preparation method of the thorium oxide doped material, application of the thorium oxide doped material to preparation of a high-density ThO2 ceramic material, the high-density ThO2 ceramic material prepared from the thorium oxide doped material and a preparation method of the high-density ThO2 ceramic material. The ThO2 ceramic with higher density can be prepared according to the thorium oxide doped material disclosed by the invention. Besides, the high-density ThO2 ceramic can be obtained at a relatively low sintering temperature and/or without cold isostatic pressing, so that the preparation difficulty of the high-density ThO2 ceramic is reduced, and the complexity and implementation difficulty of sintering equipment are reduced.
本发明涉及掺杂氧化钍材料及其制备方法和用途。具体而言，本发明涉及式Th1‑xMxO2‑x/2所示的掺杂氧化钍材料，其中M为Sc或Y；0.005≤x≤0.15。本发明还涉及所述掺杂氧化钍材料的制备方法和用于制备高密度ThO2陶瓷材料的用途，由所述掺杂氧化钍材料制备的高密度ThO2陶瓷材料及其制备方法。根据本发明的掺杂氧化钍材料可以制备出具有更高密度的ThO2陶瓷。此外，本发明可以在较低的烧结温度下和/或不采用冷等静压就可以得到高密度的ThO2陶瓷，从而降低了高密度ThO2陶瓷的制备难度，降低了烧结设备的复杂性和实现难度。
Thorium oxide doped material and preparation method and application thereof
掺杂氧化钍材料及其制备方法和用途
LIAO WUPING (author) / QI SONG (author) / GUAN FANG (author) / ZHANG ZEPING (author) / PENG DAN (author)
2024-07-12
Patent
Electronic Resource
Chinese
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